Electric optical device and electronic device
An electric optical device includes a transistor that includes a semiconductor layer having a source region connected to a data line, a drain region connected to a pixel electrode, and a channel region, and a gate electrode, a first light blocking film that is formed to be wider than the gate electrode and that is connected to the gate electrode via a first contact hole which is opened in a first insulating film disposed on the gate electrode, and a second light blocking film that is provided between the semiconductor layer and a substrate and is connected to the first light blocking film via a second contact hole which is opened to penetrate the first insulating film, a gate insulating film, and a second insulating film.
1. An electric optical device comprising:
a substrate;
a data line and a scan line intersecting each other on the substrate;
a pixel electrode provided in a pixel corresponding to an intersection of the data line and the scan line;
a transistor provided between the pixel electrode and the substrate, the transistor including:
a semiconductor layer having a first source/drain region electrically connected to the data line, a second source/drain region electrically connected to the pixel electrode, and a channel region provided between the first source/drain region and the second source/drain region,
a gate electrode provided to be opposed to the channel region, and
a gate insulating film provided between the channel region and the gate electrode;
a first insulating film provided between the pixel electrode and the gate electrode;
a first light blocking film provided between the first insulating film and the gate electrode, the first light blocking film being formed to have a part overlapping with the gate electrode, and being electrically connected to the gate electrode via a first contact hole which is opened in the first insulating film;
a second insulating film provided between the semiconductor layer and the substrate; and
a second light blocking film provided between the second insulating film and the substrate, the second light blocking film being electrically connected to the first light blocking film via a second contact hole which is opened to penetrate the first insulating film, the gate insulating film, and the second insulating film.
2. The electric optical device according to claim 1 , wherein the gate electrode and the first light blocking film include the same material.
3. The electric optical device according to claim 1 , wherein the semiconductor layer includes a junction region formed between the second source/drain region and the channel region, and
wherein the first light blocking film is formed to surround the junction region.
4. The electric optical device according to claim 1 , wherein the second contact hole is formed along the semiconductor layer from a flank of a part where the first light blocking film overlaps with the channel region in a plan view.
5. The electric optical device according to claim 1 , wherein the first light blocking film has an OD value of two or more.
6. The electric optical device according to claim 1 , wherein the first contact hole is integrally formed with the second contact hole.
7. An electronic device comprising the electric optical device according to claim 1 .