Silicon-nitrogen compound film, and gas-barrier film and thin-film device using the silicon-nitrogen compound film

1. A silicon-nitrogen compound film of a material expressed by a compositional formula Si 3 N x O y H z , where x, y, and z satisfy 10≦(3x+2y)≦12, 3.4≦x≦4.0, 0≦y, and 0<z<2.0, a peak-area ratio of a first area of a first peak appearing near a wave number of 2150 cm −1 in a Fourier-transform infrared absorption spectrum of said material and corresponding to a Si—H stretching vibration to a second area of a second peak appearing near a wave number of 810 cm −1 in the Fourier-transform infrared absorption spectrum and corresponding to a Si—N stretching vibration is smaller than 0.2, and said silicon-nitrogen compound film has a thickness t (in nanometers) and a density d (g/cm 3 ) which satisfy the inequalities,

1.9≦d≦2.5, and

−700d+1930≦6t≦−700d+2530.

2. A silicon-nitrogen compound film according to claim 1 , having a water-vapor transmission rate not exceeding 1×10 −3 g/m 2 day.

3. A gas-barrier film comprising one or more silicon-nitrogen compound films and one or more organic films which are alternately laminated, where each of the one or more silicon-nitrogen compound films is said silicon-nitrogen compound film according to claim 1 .

4. A gas-barrier film according to claim 3 , having a water-vapor transmission rate not exceeding 10 −6 g/m 2 /day.

5. A thin-film device comprising:

a substrate having one or more organic films; and

said gas-barrier film according to claim 3 formed over said substrate.