Image sensing device and manufacture method thereof
View Patent ↗An image sensing device for receiving an incident light having an incident angle and photo signals formed thereby is provided. The image sensing device includes a micro prism and a micro lens for adjusting the incident angle and converging the incident light, respectively, a photo sensor for converting the photo signals into electronic signals, and an IC stacking layer for processing the electronic signals.
1. A method for manufacturing an image sensing device, comprising the steps of:
providing a substrate;
forming a photo sensor on said substrate by a first IC process;
forming an IC stacking layer on said photo sensor by a second IC process;
forming a micro prism on said IC stacking layer by a first integrated optical process, wherein said micro prism has an inclined angle, said inclined angle is a function of a first side, a second side, and a third side of said micro prism, and wherein said micro prism deflects light with a chief ray angle entering said micro prism to an exit light which is parallel to a line normal to said third side of said micro prism;
forming an intermediate layer on said micro prism by a second integrated optical process; and
forming a micro lens on said intermediate layer by a third integrated optical process.
2. The method according to claim 1 , wherein said micro prism, said micro lens, and said photo sensor are configured in a decenter arrangement.
3. The method according to claim 2 , wherein said decenter arrangement comprises a regular decenter arrangement and an irregular decenter arrangement.
4. A method for manufacturing an image sensing device, comprising the steps of:
providing a substrate;
forming a photo sensor on said substrate by a first IC process;
forming an IC stacking layer on said photo sensor by a second IC process;
forming a micro lens on said IC stacking layer by a first integrated optical process;
forming an intermediate layer separating said micro lens and a micro prism for increasing the refraction of incident light on said micro lens by a second integrated optical process, wherein said intermediate layer is manufactured by depositing one selected from the group consisting of silicon oxide, silicon nitride and silicon oxynitride with PECVD process; and
forming said micro prism on said intermediate layer by a third integrated optical process.
5. The method according to claim 4 , wherein said substrate is a semiconductor substrate.
6. The method according to claim 4 , wherein said micro prism is made of a dielectric material which is pervious to light.
7. The method according to one of claim 4 , wherein said micro prism is manufactured by one selected from the group consisting of gray masking process, photoresist process and etching process.
8. The method according to claim 4 , wherein said micro prism, said micro lens, and said photo sensor are configured in a decenter arrangement.
9. The method according to claim 8 , wherein said decenter arrangement comprises a regular decenter arrangement and an irregular decenter arrangement.