Light emitting device and light emitting device package having the same
Disclosed are a light emitting device and a light emitting device package. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, an electrode on the first conductive type semiconductor layer, a reflective layer under the second conductive type semiconductor layer, a protective layer at outer peripheral portions of a lower surface of the second conductive type semiconductor layer, and a light extraction structure including a compound semiconductor on the protective layer.
1. A semiconductor light emitting device comprising:
a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first and second conductive type semiconductor layers;
an electrode on the first conductive type semiconductor layer;
a reflective layer under the second conductive type semiconductor layer;
a protective layer on an outer portion of the reflective layer;
a light extraction structure including a compound semiconductor on the protective layer; and
an ohmic layer formed of a conductive oxide between the reflective layer and the second conductive type semiconductor layer, the ohmic layer making ohmic-contact with a lower surface of the second conductive type semiconductor layer.
2. The semiconductor light emitting device of claim 1 , wherein the ohmic layer makes contact with a lower surface of the protective layer.
3. The semiconductor light emitting device of claim 1 , wherein the ohmic layer makes contact with a lower portion of the protective layer, and the semiconductor light emitting device further comprises a capping layer in contact with at least one of the ohmic layer and the protective layer.
4. The semiconductor light emitting device of claim 1 , wherein the protective layer or the ohmic layer includes at least one of transmissive nitride, transmissive oxide, and transmissive insulating material.
5. The semiconductor light emitting device of claim 1 , wherein an outer portion of the ohmic layer includes the light extraction structure and is disposed between the protective layer and the reflective layer.