Semiconductor device
A semiconductor device to improve layout uniformity may include an active region formed in a substrate, a dummy active region formed in the substrate and separated from the active region, a word line crossing over the active region, and a dummy word line. The dummy word line is formed over the dummy active region to overlap at least part of the dummy active region and may have an end positioned within the dummy active region.
1. A semiconductor device comprising:
an active region formed in a substrate;
a dummy active region formed in the substrate and separated from the active region;
a word line crossing over the active region; and
a dummy word line, formed over the dummy active region to overlap at least part of the dummy active region, having an end positioned within the dummy active region.
2. The semiconductor device of claim 1 , comprising:
a bit line that crosses over the active region and the dummy active region, and
that is electrically connected with the dummy active region and the word line.
3. The semiconductor device of claim 1 , wherein
the active region and the dummy active region are positioned in a first conductivity type region,
the dummy active region and the dummy word line form a second conductivity type MOS transistor,
the dummy active region is electrically connected with a bit line crossing over the dummy active region,
the dummy word line is electrically connected with a second conductivity type region outside the first conductivity type region, and
the dummy active region and the dummy word line form a power capacitor.
4. The semiconductor device of claim 3 , wherein the first conductivity type region is an N type region and the second conductivity type region is a P type region.
5. The semiconductor device of claim 4 , wherein a high power supply voltage is applied to the dummy active region and a low power supply voltage is applied to the dummy word line.
6. The semiconductor device of claim 3 , wherein the first conductivity type region is a P type region and the second conductivity type region is an N type region.
7. The semiconductor device of claim 6 , wherein a low voltage power supply is electrically connected to the dummy active region and a high voltage power supply is electrically connected to the dummy word line.
8. The semiconductor device of claim 1 , wherein the end of the dummy word line is aligned with a virtual line extended from at least part of the word line.
9. The semiconductor device of claim 1 , wherein the dummy active region is aligned with a virtual line extended from an end of the active region.
10. The semiconductor device of claim 1 , further comprising:
a bit line that crosses over the active region; and wherein the dummy word line is electrically connected to the bit line.