Three-dimensional semiconductor devices
Provided are a three-dimensional semiconductor device and a method of operating the same. The three-dimensional semiconductor device includes: a plurality of word line structures on a substrate; active semiconductor patterns between the plurality of word line structures; and information storage elements between the plurality of word line structures and the active semiconductor patterns. Each of the plurality of word line structures includes a plurality of word lines spaced apart from each other and stacked, and the active semiconductor patterns include electrode regions and channel regions, the electrode regions and the channel regions having different conductive types and being alternately arranged.
1. A three-dimensional semiconductor memory device comprising:
a plurality of word line structures on a substrate;
a plurality of active semiconductor patterns between the plurality of word line structures; and
a plurality of information storage elements between the plurality of word line structures and the plurality of active semiconductor patterns,
wherein each of the plurality of word line structures includes a plurality of word lines spaced apart from each other and stacked sequentially, and
wherein the plurality of active semiconductor patterns include a plurality of electrode regions and a plurality of channel regions, which are alternately arranged and have conductive types different from each other.
2. The three-dimensional semiconductor memory device of claim 1 , wherein the plurality of electrode regions and the plurality of channel regions constituting one active semiconductor pattern are continuously arranged,
wherein each of the plurality of channel regions directly contacts two of the plurality of electrode regions adjacent thereto.
3. The three-dimensional semiconductor memory device of claim 1 , further comprising a plurality of bit lines connecting respective ones of the electrode regions,
wherein ones of the plurality of bit lines are disposed above or below ones of the plurality of word line structures to cross the plurality of word lines.
4. The three-dimensional semiconductor memory device of claim 3 , wherein the plurality of bit lines comprise:
a plurality of first bit lines connecting ones of the plurality of electrode regions corresponding to odd-numbered active semiconductor patterns; and
a plurality of second bit lines connecting ones of the plurality of electrode regions corresponding to even-numbered active semiconductor patterns and are electrically separated from the plurality of first bit lines.
5. The three-dimensional semiconductor memory device of claim 4 , wherein the plurality of first bit lines are disposed above the plurality of word line structures, and
wherein the plurality of second bit lines are disposed below the plurality of word line structures.
6. The three-dimensional semiconductor memory device of claim 1 , further comprising:
a plurality of bit lines crossing above or below the plurality of word line structures; and
a plurality of switching elements disposed between ones of the plurality of electrode regions and ones of the plurality of bit lines to control an electrical connection between ones of the plurality of electrode regions and ones of the plurality of bit lines,
wherein ones of the plurality of switching elements are configured to electrically connect ones of the plurality of electrode regions of one of one pair of adjacent active semiconductor patterns to corresponding ones of the plurality of bit lines and to electrically separate ones of the plurality the electrode regions of an other of the one pair of adjacent active semiconductor patterns from the plurality of bit lines.
7. The three-dimensional semiconductor memory device of claim 1 , wherein the substrate comprises a cell array region on which the plurality of word line structures are disposed, and a peripheral region on which a peripheral circuit is disposed,
wherein the plurality of word line structures are placed at a level higher than the substrate below the peripheral circuit.
8. The three-dimensional semiconductor memory device of claim 1 , further comprising:
a plurality of bit lines crossing above or below the plurality of word line structures;
a plurality of switching elements disposed between ones of the plurality of electrode regions and the plurality of bit lines to control an electrical connection between the electrode regions and the bit lines; and
a plurality of MUX circuits connected to the plurality of bit lines to select at least one of the plurality of bit lines,
wherein each of the plurality of MUX circuits is configured to operate independently.
9. A three-dimensional semiconductor memory device comprising:
a plurality of word line structures including a plurality of spaced apart word lines on a substrate;
a plurality of active semiconductor patterns that are arranged between the plurality of word line structures and that include a plurality of electrode regions and a plurality of channel regions;
a plurality of information storage elements between the plurality of word line structures and the plurality of active semiconductor patterns;
a plurality of bit lines connecting respective ones of the electrode regions and crossing above or below the plurality of word line structures; and
a plurality of switching elements disposed between ones of the plurality of electrode regions and ones of the plurality of bit lines to control an electrical connection between ones of the plurality of electrode regions and ones of the plurality of bit lines.
10. The three-dimensional semiconductor memory device of claim 9 , wherein ones of the plurality of switching elements are configured to electrically connect ones of the plurality of electrode regions of one of one pair of adjacent active semiconductor patterns to corresponding ones of the plurality of bit lines and to electrically separate ones of the plurality the electrode regions of an other of the one pair of adjacent active semiconductor patterns from the plurality of bit lines.