IP Library › Granted Patent US 8,154,059
Granted Patent B2
US 8,154,059 · App. 12/910,150 · Granted Apr 10, 2012

Semiconductor device and method for manufacturing the same

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,154,059
App. No.
12/910,150
Granted
Apr 10, 2012
Kind
B2
Abstract

An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.

Claims (95)

1. A cellular phone having a display device, the display device comprising:

a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen; and

a pixel matrix circuit formed over the first insulating layer, the pixel matrix circuit comprising a plurality of pixels;

wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and

wherein a concentration of nitrogen of the first insulating layer is higher than 2×10 20 atoms/cm 3 .

2. The cellular phone according to claim 1 ,

wherein the concentration of nitrogen of the first insulating layer is equal to or higher than 1×10 21 atoms/cm 3 .

3. The cellular phone according to claim 1 ,

wherein the concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.6 to 1.4.

4. The cellular phone according to claim 1 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.0.

5. The cellular phone according to claim 1 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.7.

6. The cellular phone according to claim 1 , further comprising a second insulating layer formed over the first insulating layer and underneath the pixel matrix circuit,

wherein the second insulating layer comprises silicon, oxygen, and nitrogen.

7. The cellular phone according to claim 6 ,

wherein a concentration of nitrogen of the second insulating layer is equal or lower than 2×10 20 atoms/cm 3 .

8. A cellular phone having a display device, the display device comprising:

a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen;

a pixel matrix circuit formed over the first insulating layer, wherein the pixel matrix circuit comprises at least a pixel having a thin film transistor;

a gate driver circuit formed over the first insulating layer;

a source driver circuit formed over the first insulating layer; and

a liquid crystal interposed between the insulating substrate and a second substrate,

wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and

wherein a concentration of nitrogen of the first insulating layer is higher than 2×10 20 atoms/cm 3 .

9. The cellular phone according to claim 8 ,

wherein the concentration of nitrogen of the first insulating layer is equal to or higher than 1×10 21 atoms/cm 3 .

10. The cellular phone according to claim 8 ,

wherein the concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.6 to 1.4.

11. The cellular phone according to claim 8 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.0.

12. The cellular phone according to claim 8 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.7.

13. The cellular phone according to claim 8 , further comprising a second insulating layer formed over the first insulating layer and underneath the pixel matrix circuit,

wherein the second insulating layer comprises silicon, oxygen, and nitrogen.

14. The cellular phone according to claim 13 ,

wherein a concentration of nitrogen of the second insulating layer is equal or lower than 2×10 20 atoms/cm 3 .

15. A cellular phone having a display device, the display device comprising:

a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen;

a pixel matrix circuit formed over the first insulating layer, wherein the pixel matrix circuit comprises at least a pixel having a thin film transistor;

a gate driver circuit formed over the first insulating layer;

a source driver circuit formed over the first insulating layer; and

a light emitting element formed over the insulating substrate and being operated by the thin film transistor,

wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and

wherein a concentration of nitrogen of the first insulating layer is higher than 2×10 20 atoms/cm 3 .

16. The cellular phone according to claim 15 ,

wherein the concentration of nitrogen of the first insulating layer is equal to or higher than 1×10 21 atoms/cm 3 .

17. The cellular phone according to claim 15 ,

wherein the concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.6 to 1.4.

18. The cellular phone according to claim 15 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.7.

19. The cellular phone according to claim 15 , further comprising a second insulating layer formed over the first insulating layer and underneath the pixel matrix circuit,

wherein the second insulating layer comprises silicon, oxygen, and nitrogen.

20. The cellular phone according to claim 19 ,

wherein a concentration of nitrogen of the second insulating layer is equal or lower than 2×10 20 atoms/cm 3 .

21. The cellular phone according to claim 20 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.0.

22. A cellular phone having a display device, the display device comprising:

a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen;

a pixel matrix circuit formed over the first insulating layer, wherein the pixel matrix circuit comprises at least a pixel having a thin film transistor;

a gate driver circuit formed over the first insulating layer;

a liquid crystal interposed between the insulating substrate and a second substrate,

wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and

wherein a concentration of nitrogen of the first insulating layer is higher than 2×10 20 atoms/cm 3 .

23. The cellular phone according to claim 22 ,

wherein the concentration of nitrogen of the first insulating layer is equal to or higher than 1×10 21 atoms/cm 3 .

24. The cellular phone according to claim 22 ,

wherein the concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.6 to 1.4.

25. The cellular phone according to claim 22 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.0.

26. The cellular phone according to claim 22 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.7.

27. The cellular phone according to claim 22 , further comprising a second insulating layer formed over the first insulating layer and underneath the pixel matrix circuit,

wherein the second insulating layer comprises silicon, oxygen, and nitrogen.

28. The cellular phone according to claim 22 ,

wherein a concentration of nitrogen of the second insulating layer is equal or lower than 2×10 20 atoms/cm 3 .

29. A cellular phone having a display device, the display device comprising:

a first insulating layer formed over an insulating substrate, the first insulating layer comprising silicon, nitrogen, and oxygen;

a pixel matrix circuit formed over the first insulating layer, wherein the pixel matrix circuit comprises at least a pixel having a thin film transistor;

a gate driver circuit formed over the first insulating layer;

a light emitting element formed over the insulating substrate and being operated by the thin film transistor,

wherein a concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.3 to 1.6, and

wherein a concentration of nitrogen of the first insulating layer is higher than 2×10 20 atoms/cm 3 .

30. The cellular phone according to claim 29 ,

wherein the concentration of nitrogen of the first insulating layer is equal to or higher than 1×10 21 atoms/cm 3 .

31. The cellular phone according to claim 29 ,

wherein the concentration ratio of nitrogen to silicon of the first insulating layer ranges from 0.6 to 1.4.

32. The cellular phone according to claim 29 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.0.

33. The cellular phone according to claim 29 ,

wherein a concentration ratio of oxygen to silicon of the first insulating layer ranges from 0.1 to 1.7.

34. The cellular phone according to claim 29 , further comprising a second insulating layer formed over the first insulating layer and underneath the pixel matrix circuit,

wherein the second insulating layer comprises silicon, oxygen, and nitrogen.

35. The cellular phone according to claim 29 ,

wherein a concentration of nitrogen of the second insulating layer is equal or lower than 2×10 20 atoms/cm 3 .

Priority Claims (1)
JP 11-076992 · Mar 23, 1999 · national
Continuity (1)
Related Publication 20110034215A1 · Feb 10, 2011