IP Library › Granted Patent US 8,154,096

Granted Patent B2

US 8,154,096 · App. 12/834,040 · Granted Apr 10, 2012

Photoelectric conversion element and manufacturing method of photoelectric conversion element

Assignee: Semiconductor Energy Laboratory Co., Ltd.

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Quick Facts

Patent No.: US 8,154,096
App. No.: 12/834,040
Granted: Apr 10, 2012
Kind: B2

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Abstract

An object is to provide a photoelectric conversion element having a side surface with different taper angles by conducting etching of a photoelectric conversion layer step-by-step. A pin photodiode has a high response speed compared with a pn photodiode but has a disadvantage of large dark current. One cause of the dark current is considered to be conduction through an etching residue which is generated in etching and deposited on a side surface of the photoelectric conversion layer. Leakage current of the photoelectric conversion element is reduced by forming a structure in which a side surface has two different tapered shapes, which conventionally has a uniform surface, so that the photoelectric conversion layer has a side surface of a p-layer and a side surface of an n-layer, which are not in the same plane.

Claims (276)

1. A photoelectric conversion element, comprising:

a conductive layer;

a photoelectric conversion layer including stacked layers of a first semiconductor layer, a second semiconductor layer and a third semiconductor layer;

the first semiconductor layer containing an impurity element of one conductivity type;

the second semiconductor layer formed on the first semiconductor layer; and

the third semiconductor layer containing an impurity element of an opposite conductivity type to that in the first semiconductor layer, on the second semiconductor layer,

wherein a side surface of the photoelectric conversion layer includes a surface with a first taper angle and a surface with a second taper angle,

wherein the surface with the first taper angle includes a side surface of the first semiconductor layer and a part of a side surface of the second semiconductor layer,

wherein the surface with the second taper angle includes another part of the side surface of the second semiconductor layer and a side surface of the third semiconductor layer,

wherein the surface with the first taper angle and the surface with the second taper angle have different taper angles,

wherein a part of the first semiconductor layer is on the conductive layer, and the other part of the first semiconductor layer is on the same surface where the conductive layer is formed.

2. The photoelectric conversion element according to claim 1 ,

wherein the first to third semiconductor layers contain silicon as main components.

3. The photoelectric conversion element according to claim 1 ,

wherein the first semiconductor layer is a p-type semiconductor layer,

wherein the second semiconductor layer is an intrinsic semiconductor layer,

wherein the third semiconductor layer is an n-type semiconductor layer, and

wherein the conductive layer is formed over a light-transmitting substrate.

4. The photoelectric conversion element according to claim 1 ,

wherein the conductive layer has a tapered shape.

5. The photoelectric conversion element according to claim 1 ,

wherein the first semiconductor layer is formed over a protective layer, and

wherein the protective layer covers an end portion of the conductive layer.

6. The photoelectric conversion element according to claim 1 ,

wherein the first semiconductor layer is formed over a protective layer,

wherein the protective layer covers an end portion of the conductive layer,

wherein the protective layer has a color filter layer, and

wherein an overcoat layer is provided between the color filter layer and the photoelectric conversion layer.

7. The photoelectric conversion element according to claim 1 ,

wherein the photoelectric conversion element is formed over a base layer, and

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof.

8. The photoelectric conversion element according to claim 1 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof, and

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness.

9. The photoelectric conversion element according to claim 1 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof,

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness, and

wherein a layer formed of a same material as the base layer is provided over the region with unevenness in the base layer.

10. The photoelectric conversion element according to claim 1 ,

wherein the conductive layer comprises a light-transmitting conductive material.

11. The photoelectric conversion element according to claim 1 ,

wherein the conductive layer comprises titanium.

12. The photoelectric conversion element according to claim 1 ,

wherein a light blocking layer is provided in a region overlapping with an end portion of the photoelectric conversion element.

13. A photoelectric conversion element, comprising:

a conductive layer;

a photoelectric conversion layer including stacked layers of a first semiconductor layer, a second semiconductor layer and a third semiconductor layer;

the first semiconductor layer containing an impurity element of one conductivity type;

the second semiconductor layer formed on the first semiconductor layer; and

the third semiconductor layer containing an impurity element of an opposite conductivity type to that in the first semiconductor layer, on the second semiconductor layer,

wherein a side surface of the photoelectric conversion layer includes a surface with a first taper angle and a surface with a second taper angle,

wherein the surface with the first taper angle includes a side surface of the first semiconductor layer and a part of a side surface of the second semiconductor layer,

wherein the surface with the second taper angle includes another part of the side surface of the second semiconductor layer and a side surface of the third semiconductor layer,

wherein the surface with the first taper angle has a larger taper angle than the surface with the second taper angle, and

wherein a part of the first semiconductor layer is on the conductive layer, and the other part of the first semiconductor layer is on the same surface where the conductive layer is formed.

14. The photoelectric conversion element according to claim 13 ,

wherein the first to third semiconductor layers contain silicon as main components.

15. The photoelectric conversion element according to claim 13 ,

wherein the first semiconductor layer is a p-type semiconductor layer,

wherein the second semiconductor layer is an intrinsic semiconductor layer,

wherein the third semiconductor layer is an n-type semiconductor layer, and

wherein the conductive layer is formed over a light-transmitting substrate.

16. The photoelectric conversion element according to claim 13 ,

wherein the conductive layer has a tapered shape.

17. The photoelectric conversion element according to claim 13 ,

wherein the first semiconductor layer is formed over a protective layer, and

wherein the protective layer covers an end portion of the conductive layer.

18. The photoelectric conversion element according to claim 13 ,

wherein the first semiconductor layer is formed over a protective layer,

wherein the protective layer covers an end portion of the conductive layer,

wherein the protective layer has a color filter layer, and

wherein an overcoat layer is provided between the color filter layer and the photoelectric conversion layer.

19. The photoelectric conversion element according to claim 13 ,

wherein the photoelectric conversion element is formed over a base layer, and

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof.

20. The photoelectric conversion element according to claim 13 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof, and

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness.

21. The photoelectric conversion element according to claim 13 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof,

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness, and

wherein a layer formed of a same material as the base layer is provided over the region with unevenness in the base layer.

22. The photoelectric conversion element according to claim 13 ,

wherein the conductive layer comprises a light-transmitting conductive material.

23. The photoelectric conversion element according to claim 13 ,

wherein the conductive layer comprises titanium.

24. The photoelectric conversion element according to claim 13 ,

wherein a light blocking layer is provided in a region overlapping with an end portion of the photoelectric conversion element.

25. A photoelectric conversion element, comprising:

a conductive layer;

a photoelectric conversion layer including stacked layers of a first semiconductor layer, a second semiconductor layer and a third semiconductor layer;

the first semiconductor layer containing an impurity element of one conductivity type;

the second semiconductor layer formed on the first semiconductor layer; and

the third semiconductor layer containing an impurity element of an opposite conductivity type to that in the first semiconductor layer, on the second semiconductor layer,

wherein a side surface of the photoelectric conversion layer includes a surface with a first taper angle and a surface with a second taper angle,

wherein the surface with the first taper angle includes a side surface of the first semiconductor layer and a side surface of the second semiconductor layer,

wherein the surface with the second taper angle includes a side surface of the third semiconductor layer,

wherein the surface with the first taper angle and the surface with the second taper angle have different taper angles,

wherein a part of the first semiconductor layer is on the conductive layer, and the other part of the first semiconductor layer is on the same surface where the conductive layer is formed.

26. The photoelectric conversion element according to claim 25 ,

wherein the first to third semiconductor layers contain silicon as main components.

27. The photoelectric conversion element according to claim 25 ,

wherein the first semiconductor layer is a p-type semiconductor layer,

wherein the second semiconductor layer is an intrinsic semiconductor layer,

wherein the third semiconductor layer is an n-type semiconductor layer, and

wherein the conductive layer is formed over a light-transmitting substrate.

28. The photoelectric conversion element according to claim 25 ,

wherein the conductive layer has a tapered shape.

29. The photoelectric conversion element according to claim 25 ,

wherein the first semiconductor layer is formed over a protective layer, and

wherein the protective layer covers an end portion of the conductive layer.

30. The photoelectric conversion element according to claim 25 ,

wherein the first semiconductor layer is formed over a protective layer,

wherein the protective layer covers an end portion of the conductive layer,

wherein the protective layer has a color filter layer, and

wherein an overcoat layer is provided between the color filter layer and the photoelectric conversion layer.

31. The photoelectric conversion element according to claim 25 ,

wherein the photoelectric conversion element is formed over a base layer, and

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof.

32. The photoelectric conversion element according to claim 25 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof, and

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness.

33. The photoelectric conversion element according to claim 25 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof,

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness, and

wherein a layer formed of a same material as the base layer is provided over the region with unevenness in the base layer.

34. The photoelectric conversion element according to claim 25 ,

wherein the conductive layer comprises a light-transmitting conductive material.

35. The photoelectric conversion element according to claim 25 ,

wherein the conductive layer comprises titanium.

36. The photoelectric conversion element according to claim 25 ,

wherein a light blocking layer is provided in a region overlapping with an end portion of the photoelectric conversion element.

37. A photoelectric conversion element, comprising:

a conductive layer;

a photoelectric conversion layer including stacked layers of a first semiconductor layer, a second semiconductor layer and a third semiconductor layer;

the first semiconductor layer containing an impurity element of one conductivity type;

the second semiconductor layer formed on the first semiconductor layer; and

the third semiconductor layer containing an impurity element of an opposite conductivity type to that in the first semiconductor layer, on the second semiconductor layer,

wherein a side surface of the photoelectric conversion layer includes a surface with a first taper angle and a surface with a second taper angle,

wherein the surface with the first taper angle includes a side surface of the first semiconductor layer and a side surface of the second semiconductor layer,

wherein the surface with the second taper angle includes a side surface of the third semiconductor layer,

wherein the surface with the first taper angle has a larger taper angle than the surface with the second taper angle,

wherein a part of the first semiconductor layer is on the conductive layer, and the other part of the first semiconductor layer is on the same surface where the conductive layer is formed.

38. The photoelectric conversion element according to claim 37 ,

wherein the first to third semiconductor layers contain silicon as main components.

39. The photoelectric conversion element according to claim 37 ,

wherein the first semiconductor layer is a p-type semiconductor layer,

wherein the second semiconductor layer is an intrinsic semiconductor layer,

wherein the third semiconductor layer is an n-type semiconductor layer, and

wherein the conductive layer is formed over a light-transmitting substrate.

40. The photoelectric conversion element according to claim 37 ,

wherein the conductive layer has a tapered shape.

41. The photoelectric conversion element according to claim 37 ,

wherein the first semiconductor layer is formed over a protective layer, and

wherein the protective layer covers an end portion of the conductive layer.

42. The photoelectric conversion element according to claim 37

wherein the first semiconductor layer is formed over a protective layer,

wherein the protective layer covers an end portion of the conductive layer,

wherein the protective layer has a color filter layer, and

wherein an overcoat layer is provided between the color filter layer and the photoelectric conversion layer.

43. The photoelectric conversion element according to claim 37 ,

wherein the photoelectric conversion element is formed over a base layer, and

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof.

44. The photoelectric conversion element according to claim 37 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof, and

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness.

45. The photoelectric conversion element according to claim 37 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof,

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness, and

wherein a layer formed of a same material as the base layer is provided over the region with unevenness in the base layer.

46. The photoelectric conversion element according to claim 37 ,

wherein the conductive layer comprises a light-transmitting conductive material.

47. The photoelectric conversion element according to claim 37 ,

wherein the conductive layer comprises titanium.

48. The photoelectric conversion element according to claim 37 ,

wherein a light blocking layer is provided in a region overlapping with an end portion of the photoelectric conversion element.

49. A photoelectric conversion element, comprising:

a conductive layer;

a photoelectric conversion layer including stacked layers of a first semiconductor layer, a second semiconductor layer and a third semiconductor layer;

the first semiconductor layer containing an impurity element of one conductivity type;

the second semiconductor layer formed on the first semiconductor layer; and

the third semiconductor layer containing an impurity element of an opposite conductivity type to that in the first semiconductor layer, on the second semiconductor layer,

wherein a side surface of the photoelectric conversion layer includes a surface with a first taper angle and a surface with a second taper angle,

wherein, in a cross sectional view of the photoelectric conversion layer, the surface with the first taper angle includes a side surface of the first semiconductor layer and an entire side surface of the second semiconductor layer,

wherein the surface with the second taper angle includes a side surface of the third semiconductor layer,

wherein the surface with the first taper angle and the surface with the second taper angle have different taper angles, and

wherein a part of the first semiconductor layer is on the conductive layer, and the other part of the first semiconductor layer is on the same surface where the conductive layer is formed.

50. The photoelectric conversion element according to claim 49 ,

wherein the first to third semiconductor layers contain silicon as main components.

51. The photoelectric conversion element according to claim 49 ,

wherein the first semiconductor layer is a p-type semiconductor layer,

wherein the second semiconductor layer is an intrinsic semiconductor layer,

wherein the third semiconductor layer is an n-type semiconductor layer, and

wherein the conductive layer is formed over a light-transmitting substrate.

52. The photoelectric conversion element according to claim 49 ,

wherein the conductive layer has a tapered shape.

53. The photoelectric conversion element according to claim 49 ,

wherein the first semiconductor layer is formed over a protective layer, and

wherein the protective layer covers an end portion of the conductive layer.

54. The photoelectric conversion element according to claim 49 ,

wherein the first semiconductor layer is formed over a protective layer,

wherein the protective layer covers an end portion of the conductive layer,

wherein the protective layer has a color filter layer, and

wherein an overcoat layer is provided between the color filter layer and the photoelectric conversion layer.

55. The photoelectric conversion element according to claim 49 ,

wherein the photoelectric conversion element is formed over a base layer, and

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof.

56. The photoelectric conversion element according to claim 49 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof, and

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness.

57. The photoelectric conversion element according to claim 49 ,

wherein the photoelectric conversion element is formed over a base layer,

wherein the base layer comprises a material selected from a group consisting of a polyimide, an acrylic resin, an epoxy resin and a combination thereof,

wherein a region in the base layer which is not overlapped with the photoelectric conversion element has unevenness, and

wherein a layer formed of a same material as the base layer is provided over the region with unevenness in the base layer.

58. The photoelectric conversion element according to claim 49 ,

wherein the conductive layer comprises a light-transmitting conductive material.

59. The photoelectric conversion element according to claim 49 ,

wherein the conductive layer comprises titanium.

60. The photoelectric conversion element according to claim 49 ,

wherein a light blocking layer is provided in a region overlapping with an end portion of the photoelectric conversion element.

61. A photoelectric conversion element, comprising: