IP Library Granted Patent US 8,163,083
Granted Patent B2
US 8,163,083 · App. 12/169,828 · Granted Apr 24, 2012

Silica glass crucible and method for pulling up silicon single crystal using the same

Assignees: Japan Super Quartz Corporation; Sumco Corporation
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Quick Facts
Patent No.
US 8,163,083
App. No.
12/169,828
Granted
Apr 24, 2012
Kind
B2
Abstract

A silica glass crucible causing fewer pinholes in silicon single crystals is provided by a method of preventing pinholes by performing the pulling up of a silicon single crystal while restraining the dissolution rate of the crucible inner surface to 20 μm/hr or less, using a silica glass crucible for the pulling up of silicon single crystals, wherein the area of crystalline silica formed by crystallization of amorphous silica is restricted to 10% or less of the crucible inner surface area, or the density of pits formed from open bubbles on the crucible inner surface is restricted to 0.01 to 0.2 counts/mm 2 .

Claims (8)

1. A method for pulling up a silicon single crystal from a silica glass crucible, the method comprising performing the pulling up of a silicon single crystal while restricting the dissolution rate of the crucible inner surface to 20 μm/hr or less, wherein the silica glass crucible has properties such that:

the area of crystalline silica formed by crystallization of amorphous silica to 10% or less of the inner surface area of the crucible; and

the density of pits originating from open bubbles on the crucible inner surface, to 0.01 to 0.2 counts/mm 2 .

2. The method for pulling up a silicon single crystal according to claim 1 , wherein the argon partial pressure inside the furnace during the pulling up of silicon is 0.40 to 66.7 kPa.

3. The method for pulling up a silicon single crystal according to claim 1 , wherein the temperature during the pulling up of the silicon single crystal is 1420 to 1550° C.

4. The method for pulling up a silicon single crystal according to claim 1 , wherein the temperature at the time of melting the silicon raw material is 1420 to 1600° C.

5. The method for pulling up a silicon single crystal according to claim 1 , wherein the size of the pit is 0.2 to 2.0 mm.

6. The method for pulling up a silicon single crystal according to claim 1 , wherein the pits are present on one side of the crucible surface.

Assignments (2)
MERGER Recorded Oct 15, 2018
From: JAPAN SUPER QUARTZ CORPORATION
To: SUMCO CORPORATION
Reel/Frame 047237/0179 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 10, 2008
From: KISHI, HIROSHI; KANDA, MINORU
To: JAPAN SUPER QUARTZ CORPORATION; SUMCO CORPORATION
Reel/Frame 021693/0898 →
Continuity (1)
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