IP Library Granted Patent US 8,164,089
Granted Patent B2
US 8,164,089 · App. 12/575,739 · Granted Apr 24, 2012

Electronic device

Assignee: Xerox Corporation
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Quick Facts
Patent No.
US 8,164,089
App. No.
12/575,739
Granted
Apr 24, 2012
Kind
B2
Abstract

Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors.

Claims (18)

1. A thin-film transistor comprising a semiconducting layer, the semiconducting layer comprising an organic semiconductor and graphene; wherein the graphene concentration in the semiconducting layer is lower than the critical concentration for a percolation network.

2. A process for forming a semiconducting layer on a substrate, comprising stratifying at least one organic semiconductor with at least one graphene, wherein the semiconducting layer is formed by:

dispersing graphite oxide in an aqueous solution comprising water and ammonia;

converting the graphite oxide to graphene;

dispersing the aqueous solution in an aprotic solvent and neutralizing any static charge;

dispersing the graphene in an organic solvent to form a graphene dispersion;

mixing the graphene dispersion with an organic semiconductor to form a mixture; and

depositing the mixture upon the substrate.

3. A process for forming a semiconducting layer on a substrate, comprising stratifying at least one organic semiconductor with at least one graphene, wherein the semiconducting layer is formed by:

forming a homogeneous suspension of the organic semiconductor and graphene oxide;

depositing the suspension on a surface of the substrate; and

converting the graphene oxide to graphene.

4. An electronic device comprising a semiconducting layer;

the semiconducting layer comprising (i) an organic semiconductor and (ii) graphene;

wherein the organic semiconductor comprises a semiconducting polymer of Formula (I):

wherein A is a divalent linkage; each R is independently selected from hydrogen, alkyl or substituted alkyl, aryl or substituted aryl, alkoxy or substituted alkoxy, a heteroatom-containing group, or halogen; and n is from 2 to about 5,000; and

wherein the divalent linkage A is selected from:

and combinations thereof, wherein each R′ is independently selected from hydrogen, alkyl, substituted alkyl, aryl, substituted aryl, heteroaryl, halogen, —CN, or —NO 2 .

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 3, 2013
From: XEROX CORPORATION
To: SAMSUNG ELECTRONICS CO. LTD.
Reel/Frame 030733/0970 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 8, 2009
From: WU, YILIANG; WU, NAN-XING; LIU, PING; MAHABADI, HADI K.; SMITH, PAUL F.; BARANYI, GIUSEPPA
To: XEROX CORPORATION
Reel/Frame 023345/0433 →
Continuity (1)
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