Method of fabricating a light emitting device with a p-type dopant
Provided is a light emitting device fabricating apparatus, which includes a light emitting device, first and second contact parts, a power source part, a loading plate, and a chamber. The first and second contact parts are connected to the light emitting device to apply a first current to the light emitting device. The power source part supplies power to the first and second contact parts. The loading plate supports and heats the light emitting device. The chamber accommodates the light emitting device, the first and second contact parts, and the loading plate, and has a vacuum state or oxygen atmosphere.
1. A light emitting device fabricating method comprising:
loading a light emitting device into a chamber in a vacuum state or oxygen atmosphere;
heating the light emitting device;
applying a current to the light emitting device; and
activating a p type dopant in a p type semiconductor layer of the light emitting device,
wherein the p type dopant is magnesium (Mg), and the p type dopant is activated by breaking a Mg—H bond, and
wherein hydrogen (H 2 ) gas or water (H 2 O) is discharged out of the light emitting device when the p type dopant is activated by breaking the Mg—H bond.
2. The method according to claim 1 , wherein the vacuum state has a pressure ranging from about 0 torr to about 10 −7 torr.
3. The method according to claim 1 , wherein the oxygen atmosphere has a pressure ranging from about 0.1 torr to about 10 torr.
4. The method according to claim 1 , wherein the current ranges from about 1 A to about 3 A.
5. The method according to claim 1 , wherein the heating of the light emitting device comprises heating the light emitting device to a temperature ranging from about 10° C. to about 900° C.
6. The method according to claim 1 , further comprising, after the p type dopant is activated, applying a current to the light emitting device to generate a light emitting image of the light emitting device and inspect a quality of the light emitting device.
7. The method according to claim 6 , wherein the inspecting of the quality of the light emitting device comprises disposing an optical sensor below the light emitting device to generate the light emitting image of the light emitting device.
8. The method according to claim 1 , wherein in the applying of the current to the light emitting device comprises, a contact part for supplying the current is in dot contact with an upper portion of the p type semiconductor layer of the light emitting device.
9. The method according to claim 1 , wherein the loading of the light emitting device comprises loading a wafer level light emitting device into the chamber.