Substrate for fabricating light emitting device and method for fabricating the light emitting device
Provided is a substrate for fabricating a light emitting device and a method for fabricating the light emitting device. The method for fabricating the light emitting device may include forming a sacrificial layer having band gap energy less than energy of a laser irradiated on a substrate, forming a growth layer on the sacrificial layer, forming a light emitting structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the growth layer, and irradiating the laser onto the sacrificial layer to pass through the substrate, thereby to lift-off the substrate.
1. A method for fabricating a light emitting device, the method comprising:
forming a sacrificial layer having band gap energy less than energy of a substrate on the substrate;
forming a growth layer on the sacrificial layer;
forming a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the growth layer; and
irradiating the laser onto the sacrificial layer passing through the substrate, thereby to lift-off the substrate,
wherein the growth layer is formed of the same material as that of the substrate.
2. The method of claim 1 , further comprising removing the growth layer using an etching process after the substrate is lift-off.
3. The method of claim 1 , further comprising forming a first electrode on the light emitting structure.
4. The method of claim 2 , further comprising forming a second electrode on the first conductive type semiconductor layer exposed by removing the growth layer.
5. The method of claim 1 , wherein the substrate is formed of sapphire having a single crystalline structure, and the growth layer is formed of sapphire having a poly crystalline structure.
6. The method of claim 1 , wherein the sacrificial layer has a band gap of about 1.0 eV to about 7.0 eV.
7. The method of claim 1 , wherein the sacrificial layer includes at least one selected from the group including ITO, MoxOy, WxOy, NiOx, TiOx, MN, and GaN.
8. The method of claim 1 , wherein the sacrificial layer has a thickness of about 10 nm to about 100 μm.
9. The method of claim 1 , further comprising patterning a top surface of the growth layer after the growth layer is formed.
10. The method of claim 1 , further comprising forming a buffer layer on the growth layer after the growth layer is formed.
11. A substrate for fabricating a light emitting device, the substrate comprising:
a substrate;
a sacrificial layer having band gap energy less than energy of the substrate used for removing the substrate;
a growth layer on the sacrificial layer; and
a light emitting structure comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer on the growth layer,
wherein the growth layer is formed of the same material as that of the substrate.
12. The substrate of claim 11 , wherein the sacrificial layer has a band gap of about 1.0 eV to about 7.0 eV.
13. The substrate of claim 11 , wherein the substrate is formed of sapphire having a single crystalline structure, and the growth layer is formed of sapphire having a poly crystalline structure.
14. The substrate of claim 11 , wherein the sacrificial layer includes at least one selected from the group including ITO, MoxOy, WxOy, NiOx, TiOx, MN, and GaN.
15. The substrate of claim 11 , wherein the sacrificial layer has a thickness of about 10 nm to about 100 μm.
16. The substrate of claim 11 , wherein the growth layer has a top surface including a pattern structure.