Light-emitting device and method for manufacturing the same including a light-emitting device and a protection device electrically connected by a connecting line
Provided are a light-emitting device and a method for manufacturing the same. The light-emitting device includes a substrate, a light-emitting device, a protection device, and a connecting line. The light-emitting device is formed on one part of the substrate, and includes a first semiconductor layer and a second semiconductor layer. The protection device is formed on another part of the substrate, and includes a fourth semiconductor layer and a fifth semiconductor layer. The connecting line electrically connects the light-emitting device and the protection device.
1. The light-emitting apparatus, comprising:
a substrate;
a light-emitting device on one part of the substrate and including a first semiconductor layer, a first active layer, a second semiconductor layer, and a first ohmic layer on the second semiconductor layer;
a protection device on another part of the substrate and including a fourth semiconductor layer, a second active layer, a fifth semiconductor layer, and a second ohmic layer on the fifth semiconductor layer;
a connecting line for electrically connecting the light-emitting device with the protection device;
a first bonding pad on the second ohmic layer;
a second bonding pad on the fourth semiconductor layer; and
a passivation layer in a boundary region between the light-emitting device and the protection device,
wherein the first semiconductor layer and the fourth semiconductor layer are first conductive type semiconductor layers, and the second semiconductor layer and the fifth semiconductor layer are second conductive type semiconductor layers,
wherein the connecting line includes:
a first connecting line on the fourth semiconductor layer, the passivation layer, and the first ohmic layer; and
a second connecting line on the second ohmic layer, the passivation layer and the first semiconductor layer,
wherein the light-emitting apparatus does not include a bonding pad on the light-emitting device,
wherein the light-emitting device comprises a third semiconductor layer on the second semiconductor layer, and the protection device comprises a sixth semiconductor layer on the fifth semiconductor layer, and
wherein the third semiconductor layer and the sixth semiconductor layer are the first conductive type semiconductor layers same as the first semiconductor layer and the fourth semiconductor layer.
2. The light-emitting apparatus according to claim 1 ,
wherein the first ohmic layer is on the third semiconductor layer, and
wherein the second ohmic layer is on the sixth semiconductor layer.
3. The light-emitting apparatus according to claim 1 ,
wherein the first connecting line is directly disposed on both the fourth semiconductor layer and the first ohmic layer, and
the second connecting line is directly disposed on both the second ohmic layer and the first semiconductor layer.