Electro-optical apparatus and method of driving the electro-optical apparatus
The invention provides an electro-optical apparatus that can prevent a shift in a threshold voltage of an amorphous silicon transistor while driving an organic EL device in a pixel circuit including the amorphous silicon transistor. A characteristic-adjustment circuit can be provided, which has a function of returning a shift in the threshold voltage of the amorphous silicon transistor included in the pixel circuit to the original state.
1. An electro-optical apparatus, comprising:
a plurality of gate lines;
a plurality of data lines; and
a plurality of pixel circuits corresponding to intersections of the plurality of gate lines and the plurality of data lines,
one pixel circuit of the plurality of pixel circuits including a first transistor and a light-emitting element that is coupled to the first transistor through a first node, and
the first transistor being configured such that a first voltage lower than a second voltage of the first node is applied to a gate of the first transistor in an off-state.
2. The electro-optical apparatus according to claim 1 ,
the first transistor being an N-type transistor.
3. The electro-optical apparatus according to claim 1 ,
the first transistor being an amorphous silicon transistor.
4. The electro-optical apparatus according to claim 1 ,
the light-emitting element emitting a light in a gray scale according to a data signal during a first period, and
the first transistor being in the off-state during a second period.
5. The electro-optical apparatus according to claim 1 ,
the light-emitting element emitting a light during a first period in a gray scale according to a conduction state of the first transistor set by a data signal supplied to the one pixel circuit, and
the first transistor being in the off-state during a second period.
6. The electro-optical apparatus according to claim 5 ,
the data signal being supplied to the one pixel circuit during a third period prior to the first period.
7. The electro-optical apparatus according to claim 1 ,
the one pixel circuit further including a second transistor, and
the first voltage being supplied to the gate of the first transistor in the off-state through the second transistor.
8. The electro-optical apparatus according to claim 1 ,
the one pixel circuit further including a capacitive element that is coupled between the first node and the gate of the first transistor.
9. The electro-optical apparatus according to claim 1 , further comprising:
a plurality of power source lines,
one power source line of the plurality of power source lines being coupled to the first transistor through a second node, and
the one pixel circuit further including a capacitive element that is coupled between the first node and the gate of the first transistor.
10. An electro-optical apparatus, comprising:
a plurality of gate lines;
a plurality of data lines; and
a plurality of pixel circuits corresponding to intersections of the plurality of gate lines and the plurality of data lines, each of the plurality of pixel circuits including a first transistor,
the first transistor being configured such that a gate voltage lower than a source voltage of a source of the first transistor is applied to a gate of the first transistor in an off-state.
11. The electro-optical apparatus according to claim 10 ,
the first transistor being an N-type transistor.
12. The electro-optical apparatus according to claim 10 ,
each of the plurality of pixel circuits further including a light-emitting element, and
the source of the first transistor being positioned between a drain of the first transistor and the light emitting element.
13. The electro-optical apparatus according to claim 10 ,
the first transistor being an amorphous silicon transistor.
14. The electro-optical apparatus according to claim 11 ,
the N-type transistor being an amorphous silicon transistor.
15. A method for driving an electro-optical apparatus which has a pixel circuit including a driving transistor and a light-emitting element coupled to the driving transistor through a node, the method comprising:
making the light-emitting element emit a light in a gray scale according to a data signal during a first period;
applying a voltage lower than a voltage of the node to a gate of the driving transistor during a second period, the applying of the voltage being carried out for the driving transistor in an off-state.
16. The method according to claim 15 ,
the driving transistor being an N-type transistor.