Method of manufacturing a liquid crystal display unit structure including a patterned etch stop layer above a first data line segment
A liquid crystal display unit structure and the manufacturing method thereof are provided. The method comprises the following steps: forming a patterned first metal layer with a first data line segment and a lower gate pad on a substrate; forming a patterned dielectric layer covering the first data line and the lower gate pad having a plurality of first openings and a second opening therein, forming a patterned second metal layer including a common line, a second data line segment and a upper gate pad, wherein the upper gate pad is electrically connected to the lower gate pad through the first openings, and the second data line segment is electrically connected to the first data line segment through the first openings; finally forming a patterned passivation layer and a patterned transparent conductive layer.
1. A method of manufacturing a liquid crystal display unit structure, comprising the steps of:
forming a first data line segment and a gate line on a substrate;
forming a dielectric layer covering the first data line segment and the gate line;
forming a first semiconductor layer covering the dielectric layer;
forming a patterned etch stop layer having a first portion and a second portion simultaneously on the first semiconductor layer, the first portion of the patterned etch stop layer being located above the first data line segment and the second portion of the patterned etch stop layer being located above a portion of the gate line;
forming a second semiconductor layer covering the first semiconductor layer and the patterned etch stop layer;
patterning the second semiconductor layer, the first semiconductor layer and the dielectric layer to form a plurality of first openings in the dielectric layer for exposing two terminals of the first data line segment, and to form a patterned first semiconductor layer and a patterned second semiconductor layer having a first portion located above the first data line segment and a second portion located above the portion of the gate line;
forming a source electrode, a drain electrode, a second data line segment and a common electrode line on the patterned second semiconductor layer, wherein the second data line segment is electrically connected to the first data line segment via the first openings and the common electrode line has a portion substantially covering the first portion of the second patterned semiconductor layer located above the first data line segment, and wherein the source electrode and the drain electrode are located on two sides of the second portion of the patterned etch stop layer;
forming a patterned passivation layer covering the source electrode, the drain electrode, the second data line segment and the common electrode line; and
forming a patterned transparent conductive layer on the patterned passivation layer and electrically connected to the drain electrode.
2. The method as claimed in claim 1 , wherein the step of patterning the second semiconductor layer, the first semiconductor layer and the dielectric layer comprising:
forming a patterned photoresist layer covering the second semiconductor layer with a half-tone mask by a photolithography process; and
etching the second semiconductor layer, the first semiconductor layer and the dielectric layer with the patterned photoresist layer by an etching process.
3. The method as claimed in claim 1 , wherein the patterned passivation layer comprises a silicon nitride layer.
4. The method as claimed in claim 1 , wherein the patterned transparent conductive layer comprises an indium tin oxide (ITO) layer.
5. The method as claimed in claim 1 , wherein the first semiconductor layer includes an amorphous silicon layer.
6. The method as claimed in claim 1 , wherein the second semiconductor layer includes an N-type ion heavy heavily doping amorphous silicon layer.
7. The method as claimed in claim 1 , wherein a material of the patterned etch stop layer is selected from the group consisting of silicon nitride, silicon oxide, silicon oxynitride, and organic material.