Insulating layer, electronic device, field effect transistor, and polyvinylthiophenol
Provided is an insulating layer that can improve device characteristics of an electronic device including the insulating layer. The insulating layer contains a polymer insulating substance having repeating units represented by the following formula: wherein R a represents a direct bond or any linking group, Ar represents a divalent aromatic group optionally having a substituent, and R b represents a hydrogen atom, a fluorine atom, or a univalent organic group.
1. An insulating layer comprising:
a polymer comprising at least repeating units of Formula (A):
wherein
R a represents a direct bond
Ar represents a divalent aromatic group optionally having a substituent, and
R b represents a hydrogen atom, a fluorine atom, or a univalent organic group.
2. The insulating layer according to claim 1 , wherein Ar is a hydrocarbon aromatic ring optionally having a substituent.
3. The insulating layer according to claim 1 , wherein R b is a hydrogen atom or a linear or branched hydrocarbon group.
4. The insulating layer according to claim 1 , wherein the repeating unit of Formula (A) is at least one of vinylthiophenol and a vinylthiophenol derivative.
5. The insulating layer according to claim 1 , wherein the polymer further comprises repeating units of a crosslinkable vinyl monomer.
6. The insulation layer according to claim 5 , wherein the crosslinkable vinyl monomer comprises a side chain carbon-carbon double bond capable of dimerization by irradiation with light or heat.
7. The insulation layer according to claim 6 , wherein the crosslinkable vinyl monomer is at least one of vinyl 3-phenylpropenoate and vinyl 6-phenyl-2,4-pentadienoate.
8. The insulating layer according to claim 5 , wherein a mole fraction of the crosslinkable vinyl monomer in the polymer is from 0.1 to 0.9.
9. The insulating layer according to claim 1 , wherein the polymer further comprises repeating units of a heat-resistant vinyl monomer.
10. The insulating layer according to claim 1 , wherein an electrical conductivity of the insulating layer is 1×10 −12 S/cm or less.
11. An electronic device comprising an insulating layer according to claim 1 .
12. A field-effect transistor comprising an insulating layer according to claim 1 .
13. The field-effect transistor according to claim 12 , further comprising a semiconductor layer containing porphyrin, a source electrode, a drain electrode, and a gate electrode.
14. The insulating layer according to claim 1 , wherein R b is a univalent organic group selected from the group consisting of CH 3 —, CF 3 —, CH 3 (CH 2 ) n — wherein n is an integer of 1 or more and 23 or less and a C-6 alkyl carboxyl group.
15. The insulating layer according to claim 1 , wherein the optional substituent of the divalent aromatic group is at least one selected from the group consisting of a halogen, a linear, branched, or cyclic alkyl group having 1 or more and 24 or less carbon atoms, a fluorine substituted linear, branched, or cyclic alkyl group having 1 or more and 24 or less carbon atoms, an aryl group, a cyano group, a carboxyl group, an alkoxy group, a nitro groups, an amino group, a sulfonic acid group and a hydroxyl group.
16. The insulating layer according to claim 1 , wherein a mole fraction of the repeating unit of Formula (A) in the polymer is 0.1 or greater.
17. A polymer, comprising:
a repeating unit of a crosslinkable vinyl monomer; and
at least one different repeating unit selected from the group consisting of a repeating unit of a vinylthiophenol, and a repeating unit of a vinylthiophenol derivative.
18. A polymer, comprising:
a repeating unit of a heat-resistant vinyl monomer; and
at least one different repeating unit selected from the group consisting of a repeating unit of vinylthiophenol, and a repeating unit of a vinylthiophenol derivative.