Semiconductor device having reset command

1. A semiconductor device comprising:

a reset sequence circuit which is activated by receiving an externally input signal when a reset operation is started and outputs a first trigger signal;

a latch circuit which is capable of holding selection information on circuits capable of being reset, the selection information being externally input; and

a reset control circuit which outputs a reset signal on the basis of the selection information held in the latch circuit in response to a power-on reset signal and the first trigger signal output from the reset sequence circuit.

2. The device according to claim 1 , wherein the reset control circuit selectively controls the first trigger signal for each of the circuits according to the selection information held in the latch circuit.

3. The device according to claim 1 , wherein the reset control circuit outputs the reset signal to any one of the circuits which is a reset target in the selection information and does not output the reset signal to any one of the circuits which is not the reset target in the selection information.

4. The device according to claim 1 , wherein the latch circuit is reset by a second trigger signal output from the reset sequence circuit, and

the second trigger signal is generated later than the first trigger signal.

5. The device according to claim 4 , wherein the latch circuit includes a plurality of hold units which are associated with the circuits, respectively,

each of the hold units holds information as to whether the associated one of the circuits is a reset target or not, and

all of the hold units hold information which indicates that the associated one of the circuits is the reset target, by being reset by the second trigger signal.

6. The device according to claim 1 , wherein the reset control circuit, when the power-on reset signal is asserted, outputs the reset signal, regardless of the selection information, and

when the first trigger signal is asserted, outputs the reset signal according to the selection information.

7. The device according to claim 1 , further comprising a semiconductor memory capable of holding data,

wherein the latch circuit includes a plurality of hold units which are associated with the circuits, respectively,

each of the hold units holds information as to whether the associated one of the circuits is a reset target or not, and

the circuits include at least any of a command buffer, an address buffer, a parameter latch, a sense amplifier latch, a data input/output latch, and an individual mode sequencer in the semiconductor memory.

8. The device according to claim 7 , wherein the semiconductor memory is a NAND flash memory.

9. The device according to claim 7 , wherein the semiconductor memory is a ReRAM (Resistance Random Access Memory).

10. A semiconductor device comprising:

a latch circuit which is capable of holding selection information on circuits capable of being reset, the selection information being externally input; and

a reset control circuit which outputs a reset signal on the basis of the selection information held in the latch circuit in response to an externally supplied power-on reset signal and a first trigger signal generated according to a signal externally input when a reset operation is started.

11. The device according to claim 10 , wherein the reset control circuit selectively controls the first trigger signal for each of the circuits according to the selection information held in the latch circuit.

12. The device according to claim 10 , wherein the reset control circuit outputs the reset signal to any one of the circuits which is a reset target in the selection information and does not output the reset signal to any one of the circuits which is not the reset target in the selection information.

13. The device according to claim 10 , further comprising a generator circuit which generates a second trigger signal on the basis of the first trigger signal,

wherein the latch circuit is initialized by the second trigger signals, and

the second trigger signal is generated later than the first trigger signal.

14. The device according to claim 13 , wherein the latch circuit includes a plurality of hold units which are associated with the circuits, respectively,

each of the hold units holds information as to whether the associated one of the circuits is a reset target or not, and

all of the hold units hold information which indicates that the associated one of the circuits is the reset target, by the second trigger signal.

15. The device according to claim 10 , wherein the reset control circuit, when the power-on reset signal is asserted, outputs the reset signal, regardless of the selection information, and

when the first trigger signal is asserted, outputs the reset signal according to the selection information.

16. The device according to claim 10 , further comprising a semiconductor memory capable of holding data,

wherein the latch circuit includes a plurality of hold units which are associated with the circuits, respectively,

each of the hold units holds information as to whether the associated one of the circuits is a reset target or not, and

the circuits include at least any of a command buffer, an address buffer, a parameter latch, a sense amplifier latch, a data input/output latch, and an individual mode sequencer in the semiconductor memory.

17. The device according to claim 16 , wherein the semiconductor memory is a NAND flash memory.

18. The device according to claim 16 , wherein the semiconductor memory is a ReRAM (Resistance Random Access Memory).