Ferroelectric material, method of producing ferroelectric material, and ferroelectric device
Provided are a ferroelectric material having good ferroelectricity and good insulation property, and a ferroelectric device using the ferroelectric material. In the present invention, the ferroelectric material includes a metal oxide having a perovskite-type crystal structure, in which: the metal oxide contains bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide; the bismuth ferrite is substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese; and at least one of the copper oxide and the nickel oxide is added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese.
1. A ferroelectric material comprising a metal oxide, wherein
the metal oxide contains bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide; iron of the bismuth ferrite is substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese; and at least one of the copper oxide and the nickel oxide is added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese.
2. The ferroelectric material according to claim 1 , wherein the substitution ratio of manganese is 1 at. % or more to 5 at. % or less with respect to the total amount of iron and manganese.
3. The ferroelectric material according to claim 1 , wherein the addition amount of at least one of the copper oxide and the nickel oxide is 1 mol % or more to 5 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese.
4. The ferroelectric material according to claim 1 , wherein manganese contains tetravalent manganese.
5. The ferroelectric material according to claim 1 , wherein the metal oxide comprises a polycrystal.
6. The ferroelectric material according to claim 1 , wherein the ferroelectric material forms a thin film.
7. The ferroelectric material according to claim 6 , wherein an average particle diameter of crystal grains when the ferroelectric material is observed from a film surface is 50 nm or more to 120 nm or less.
8. The ferroelectric material according to claim 6 , wherein the ferroelectric material has a thickness of 50 nm or more to 4,000 nm or less.
9. A ferroelectric device obtained by interposing the ferroelectric material according to claim 6 with a pair of electrodes.
10. A method of producing a ferroelectric material formed of a metal oxide, the metal oxide containing bismuth ferrite whose iron is substituted by manganese, and at least one of a copper oxide and a nickel oxide, iron of the bismuth ferrite being substituted by manganese at a substitution ratio of 0.5 at. % or more to 20 at. % or less with respect to a total amount of iron and manganese, and at least one of the copper oxide and the nickel oxide being added in an amount of 0.5 mol % or more to 20 mol % or less with respect to the bismuth ferrite whose iron is substituted by manganese, the ferroelectric material forms a thin film, the method comprising forming the thin film with a mixed solution of metal salts of bismuth, iron, manganese, and at least one of copper and nickel by a chemical solution deposition method.
11. The method of producing a ferroelectric material according to claim 10 , wherein the metal salt comprises 2-ethylhexanoates.
12. The method of producing a ferroelectric material according to claim 10 , wherein a difference between a total amount of iron and manganese in the mixed solution of the metal salts and a content of bismuth in the solution is 1 at. % or less.
13. The method of producing a ferroelectric material according to claim 10 , wherein the chemical solution deposition method is based on multi-layer coating, and a coating thickness per layer is 10 nm or more to 50 nm or less.