Organic electroluminescence device and method of manufacturing the same

1. An organic electroluminescence device suitable for being configured on a substrate and comprising:

a first electrode configured on the substrate;

a first doped carrier transporting layer configured on the first electrode;

a light-emitting layer configured on the first doped carrier transporting layer;

a second doped carrier transporting layer configured on the light-emitting layer and having a first surface and a second surface, the first surface being in contact with the light-emitting layer, the second surface being opposite to the first surface, wherein the first surface is substantially a planar surface, and the second surface is a rough surface; and

a second electrode configured on the second surface, wherein surface roughness (Ra) of the second surface ranges from about 30 nm to about 200 nm, and a thickness of the second doped carrier transporting layer ranges from about 0.2 μm to about 2 μm.

2. The organic electroluminescence device as claimed in claim 1 , wherein the first electrode is a transparent electrode, and the second electrode is a reflective electrode.

3. The organic electroluminescence device as claimed in claim 1 , wherein the second surface has a plurality of micro-protrusions.

4. The organic electroluminescence device as claimed in claim 1 , wherein the first doped carrier transporting layer comprises a hole transporting layer, and the second doped carrier transporting layer comprises an electron transporting layer.

5. The organic electroluminescence device as claimed in claim 1 , wherein the first doped carrier transporting layer comprises an electron transporting layer, and the second doped carrier transporting layer comprises a hole transporting layer.

6. The organic electroluminescence device as claimed in claim 1 , wherein a thickness of the second doped carrier transporting layer ranges from about 0.5 μm to about 1 μm.

7. The organic electroluminescence device as claimed in claim 1 , wherein a glass transition temperature of the second doped carrier transporting layer ranges from about 30° C. to about 100° C.

8. The organic electroluminescence device as claimed in claim 1 , wherein a glass transition temperature of the second doped carrier transporting layer ranges from about 40° C. to about 70° C.

9. The organic electroluminescence device as claimed in claim 1 , wherein the second doped carrier transporting layer comprises:

a first thin film configured on the light-emitting layer; and

a second thin film configured between the first thin film and the second electrode, wherein a glass transition temperature of the first thin film is higher than a glass transition temperature of the second thin film.

10. The organic electroluminescence device as claimed in claim 9 , wherein the second thin film comprises an n-type doped layer.

11. The organic electroluminescence device as claimed in claim 9 , wherein the second thin film comprises a p-type doped layer.

12. A method of manufacturing an organic electroluminescence device, comprising:

forming a first electrode on a substrate;

forming a first doped carrier transporting layer on the first electrode;

forming a light-emitting layer on the first doped carrier transporting layer;

forming a second doped carrier transporting layer on the light-emitting layer, the second doped carrier transporting layer having a first surface and a second surface, the first surface being in contact with the light-emitting layer, the second surface being opposite to the first surface, wherein the first surface is substantially a planar surface, and the second surface is a rough surface; and

forming a second electrode on the second surface, wherein surface roughness (Ra) of the second surface ranges from about 30 nm to about 200 nm, and a thickness of the second doped carrier transporting layer ranges from about 0.2 μm to about 2 μm.

13. The method as claimed in claim 12 , wherein a method of forming the rough surface comprises performing a thermal annealing process on the second doped carrier transporting layer.

14. The method as claimed in claim 12 , wherein a temperature at which the thermal annealing process is performed ranges from about 50° C. to about 120° C.

15. The method as claimed in claim 12 , wherein a method of forming the rough surface comprises performing a thermal evaporation process on the second doped carrier transporting layer with use of a shadow mask.

16. The method as claimed in claim 15 , wherein the shadow mask has a plurality of openings, and a distance between every two of the openings ranges from about 10 μm to about 30 μm.

17. An organic electroluminescence device suitable for being configured on a substrate and comprising:

a first electrode configured on the substrate;

a first doped carrier transporting layer configured on the first electrode and having a first surface and a second surface, the first surface being in contact with the first electrode, the second surface being opposite to the first surface, wherein the first surface is substantially a planar surface, and the second surface is a rough surface;

a light-emitting layer configured on the first doped carrier transporting layer;

a second doped carrier transporting layer configured on the light-emitting layer; and

a second electrode configured on the second doped carrier transporting layer, wherein surface roughness (Ra) of the second surface ranges from about 30 nm to about 200 nm, and a thickness of the second doped carrier transporting layer ranges from about 0.2 μm to about 2 μm.