Semiconductor light emitting device and method of manufacturing the same
Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting device comprises a first conductive type semiconductor layer, an active layer, a first thin insulating layer, and a second conductive type semiconductor layer. The active layer is formed on the first conductive type semiconductor layer. The first thin insulating layer is formed on the active layer. The second conductive type semiconductor layer is formed on the thin insulating layer.
1. A semiconductor light emitting device, comprising:
a first conductive type semiconductor layer;
an active layer formed on the first conductive type semiconductor layer;
a second conductive type semiconductor layer including a first semiconductor layer formed on the active layer and a second semiconductor layer formed on the first semiconductor layer;
a third semiconductor layer formed between the first semiconductor layer and the second semiconductor layer; and
a fourth semiconductor layer formed between the first semiconductor layer and the active layer,
wherein the third semiconductor layer has a P-type dopant concentration less than a P-type dopant concentration of the second semiconductor layer and the fourth semiconductor layer has a P-type dopant concentration less than a P-type dopant concentration of the first semiconductor layer,
wherein the third semiconductor layer has a hole concentration of about 5×10 18 /cm 3 or less and has a thickness of greater than 0 nm and less than or equal to about 9 nm.
2. The semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer and the fourth semiconductor layer each serve as a high resistive layer and a low conductive layer compared with the first semiconductor layer and the second semiconductor layer.
3. The semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer and the fourth semiconductor layer comprise at least one of GaN, InN, AlN, InGaN, AlGaN, InAlGaN, and AlInN.
4. The semiconductor light emitting device according to claim 1 , wherein the third semiconductor layer and the fourth semiconductor layer are each formed as an insulating layer by a P-type dopant, and the fourth semiconductor layer has a hole concentration of about 5×10 18 /cm 3 or less.
5. The semiconductor light emitting device according to claim 4 , wherein the third semiconductor layer and the fourth semiconductor layer each has the hole concentration of about 5×10 17 ˜5×10 18 /cm 3 .
6. The semiconductor light emitting device according to claim 1 , wherein a thickness of the fourth semiconductor layer is greater than 0 nm and less than or equal to about 9 nm.
7. The semiconductor light emitting device according to claim 1 , wherein the third and fourth semiconductor layers have the same material as the first semiconductor layer.