Doherty amplifier system and transmitter using the same
According to an embodiment, a Doherty amplifier system has a first Doherty amplifier and a second Doherty amplifier. The first Doherty amplifier operates in a SISO communication mode and in a MIMO communication mode. The first Doherty amplifier comprises a first carrier amplifier and a first peak amplifier. The second Doherty amplifier operates in the MIMO communication mode but not operates in the SISO communication mode. The second Doherty amplifier comprises a second carrier amplifier and a second peak amplifier. A distance between the first carrier amplifier and the second carrier amplifier is less than any of a distance between any of the first carrier amplifier and the second peak amplifier and any of the first peak amplifier and the second peak amplifier. In the SISO communication mode, heat generated by the first Doherty amplifier is conducted to the second Doherty amplifier to warm up the second Doherty amplifier.
1. A Doherty amplifier system comprising:
a substrate having a front surface and a back surface;
a first Doherty amplifier to operate in a SISO communication mode and in a MIMO communication mode, the first Doherty amplifier comprising a first carrier amplifier and a first peak amplifier, each arranged on one of the surfaces of the substrate; and
a second Doherty amplifier to operate in the MIMO communication mode but not to operate in the SISO communication mode, the second Doherty amplifier comprising a second carrier amplifier and a second peak amplifier, each arranged on one of the surfaces of the substrate, and
wherein a distance between the first carrier amplifier and the second carrier amplifier is less than any of a distance between the first carrier amplifier and the first peak amplifier, a distance between the first carrier amplifier and the second peak amplifier, a distance between the second carrier amplifier and the first peak amplifier, and a distance between the second carrier amplifier and the second peak amplifier,
a distance between the first peak amplifier and the second peak amplifier is less than any of the distance between the first carrier amplifier and the first peak amplifier, the distance between the first carrier amplifier and the second peak amplifier, the distance between the second carrier amplifier and the first peak amplifier, and the distance between the second carrier amplifier and the second peak amplifier, and
in the SISO communication mode, heat generated by the first Doherty amplifier is conducted to the second Doherty amplifier to warm up the second Doherty amplifier which operates in the MIMO communication mode following the SISO communication mode.
2. The system according to claim 1 , further comprising an enclosure whose thermal conductivity is higher than that of the substrate, the enclosure accommodating the first carrier amplifier and the second carrier amplifier.
3. The system according to claim 2 , further comprising a third Doherty amplifier comprising a third carrier amplifier and a third peak amplifier, each arranged on one of the surfaces of the substrate, the third Doherty amplifier having a longer operating time than the first Doherty amplifier and the second Doherty amplifier,
wherein the third carrier amplifier is arranged between the first carrier amplifier and the second carrier amplifier.
4. The system according to claim 2 , wherein the first carrier amplifier and the second carrier amplifier are arranged on one surface of the substrate, and the first peak amplifier and the second peak amplifier are arranged on a surface of the substrate opposite to the one surface of the substrate.
5. The system according to claim 4 , further comprising impedance conversion circuits, each of the impedance conversion circuits comprising:
a first impedance converter arranged on the one surface;
a second impedance converter arranged on the opposite surface and providing an impedance conversion function substantially equal to that of the first impedance converter; and
a via which makes the first impedance converter and the second impedance converter electrically continuous.
6. The system according to claim 2 , further comprising a third Doherty amplifier comprising a third carrier amplifier and a third peak amplifier, each arranged on one of the surfaces of the substrate, the third Doherty amplifier having a longer operating time than the first Doherty amplifier and the second Doherty amplifier,
wherein the third peak amplifier is arranged between the first peak amplifier and the second peak amplifier.
7. The system according to claim 1 , further comprising an enclosure whose thermal conductivity is higher than that of the substrate, the enclosure accommodating the first peak amplifier and the peak carrier amplifier.
8. The system according to claim 7 , further comprising a third Doherty amplifier comprising a third carrier amplifier and a third peak amplifier, each arranged on one of the surfaces of the substrate, the third Doherty amplifier having a longer operating time than the first Doherty amplifier and the second Doherty amplifier,
wherein the third carrier amplifier is arranged between the first carrier amplifier and the second carrier amplifier.
9. The system according to claim 7 , wherein the first carrier amplifier and the second carrier amplifier are arranged on one surface of the substrate, and the first peak amplifier and the second peak amplifier are arranged on a surface of the substrate opposite to the one surface of the substrate.
10. The system according to claim 9 , further comprising impedance conversion circuits, each of the impedance conversion circuits comprising:
a first impedance converter arranged on the one surface;
a second impedance converter arranged on the opposite surface and providing an impedance conversion function substantially equal to that of the first impedance converter; and
a via which makes the first impedance converter and the second impedance converter electrically continuous.
11. The system according to claim 7 , further comprising a third Doherty amplifier comprising a third carrier amplifier and a third peak amplifier, each arranged on one of the surfaces of the substrate, the third Doherty amplifier having a longer operating time than the first Doherty amplifier and the second Doherty amplifier,
wherein the third peak amplifier is arranged between the first peak amplifier and the second peak amplifier.
12. A transmitter comprising:
a signal processor which carries out signal processing on two baseband signals in the MIMO communication mode and carries out signal processing on one baseband signal in the SISO communication mode;
a radio processor which carries out processing for converting the two baseband signals into two radio-frequency signals in the MIMO communication mode and carries out processing for converting the one baseband signal into one radio-frequency signal in the SISO communication mode;
the Doherty amplifier system according to claim 1 which allows, in the MIMO communication mode, the first Doherty amplifier and the second Doherty amplifier to amplify power of the two radio-frequency signals and output two amplified signals and allows, in the SISO communication mode, the first Doherty amplifier to amplify power of the one radio-frequency signal and output one amplified signal; and
an antenna group which transmits the two amplified signals in the MIMO communication mode and transmits the one amplified signal in the SISO communication mode.