IP Library Granted Patent US 8,241,917
Granted Patent B2
US 8,241,917 · App. 12/794,356 · Granted Aug 14, 2012

Isotope-doped nano-material, method for making the same, and labeling method using the same

Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd.
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Quick Facts
Patent No.
US 8,241,917
App. No.
12/794,356
Granted
Aug 14, 2012
Kind
B2
Abstract

An isotope-doped nano-structure of an element is provided. The isotope-doped nano-structure includes at least one isotope-doped nano-structure segment having at least two isotopes of the element, and the at least two isotopes of the element are mixed uniformly in a certain proportion. The present disclosure also provides a method for making the isotope-doped nano-structures, and a labeling method using the isotope-doped nano-structures.

Claims (27)

1. A method for forming an isotope-doped nano-structure of an element, comprising the steps of:

(a) providing a substrate and placing the substrate into a reaction chamber;

(b) introducing a reaction source having at least two isotopes of the element into the reaction chamber simultaneously, maintaining the at least two isotopes of the element at a predetermined mass proportion and being mixed uniformly; and

(c) growing at least one isotope-doped nano-structure segment having the at least two isotopes of the element being mixed uniformly at a predetermined mass proportion on the substrate via a chemical vapor deposition method, wherein step (c) is performed after step (b).

2. The method of claim 1 , wherein the reaction source comprises at least two kinds of reaction gases, and each of the at least two kinds of reaction gases comprises a unique kind of isotope of the element.

3. The method of claim 2 , wherein the step (b) is executed by changing proportions of reaction gases introduced in the reaction chamber according to a predetermined sequence, to grow a plurality of isotope-doped nano-structure segments for given times according to the predetermined sequence, thereby forming the isotope-doped nano-structure of the element.

4. The method of claim 1 , wherein the reaction source comprises at least one premixed reaction gas having the at least two isotopes of the element at the predetermined mass proportion.

5. The method of claim 4 , wherein the step (b) is executed by introducing the at least one premixed reaction gas into the reaction chamber according to a predetermined sequence; and growing a plurality of isotope-doped nano-structure segments for given times according to the predetermined sequence, thereby forming the isotope-doped nano-structure of the element.

6. The method of claim 1 , wherein the isotope-doped nano-structure is a carbon nanotube, the reaction source is a carbon source, the carbon source comprises at least two kinds of carbon source gases, and each of the at least two kinds of carbon source gases has a unique kind of carbon isotope.

7. A labeling method using isotope-doped nano-structures, comprising the steps of:

providing a substrate and placing the substrate into a reaction chamber;

introducing a reaction source having at least two isotopes of the element into the reaction chamber simultaneously, maintaining the at least two isotopes of the element at a predetermined mass proportion and being mixed uniformly;

growing a plurality of different kinds of isotope-doped nano-structures of an element having certain Raman spectrum eigenvalues, each kind of isotope-doped nano-structure comprising at least one isotope-doped nano-structure segment having at least two isotopes of the element, and the at least two isotopes of the element being mixed uniformly in a predetermined mass proportion;

providing a plurality of different types of unlabeled structures;

implanting one kind of the isotope-doped nano-structures of the element in one type of the unlabeled structures;

measuring the Raman spectrum eigenvalues of isotope-doped nano-structures of the element planted in the unlabeled structures via Raman spectroscopy; and

distinguishing the unlabeled structures in accordance with the measured Raman spectrum eigenvalues.

8. The method of claim 7 , wherein each type of unlabeled nano-structure comprises an active group.

9. The method of claim 8 , wherein the active group is selected from the group consisting of a hydroxyl group, a carboxyl group, an amino group, an acyl group, and a nitro group.

10. The method of claim 8 , wherein the unlabeled structures are selected from the group consisting of DNAs, proteins, glucoses, gluconic acids, starches, biotin enzymes, sorbitols, and organic amines.

11. The method of claim 7 , wherein the isotope-doped nano-structure comprises at least two isotope-doped nano-structure segments having the at least two isotopes of the element, and adjacent two isotope-doped nano-structure segments have different compositions.

12. The method of claim 11 , wherein the adjacent two isotope-doped nano-structure segments comprise different isotopes of the element.

13. The method of claim 11 , wherein the adjacent two isotope-doped nano-structure segments comprise the same isotopes of the element, and predetermined mass proportions of the isotopes are different.

14. A method for forming an isotope-doped nano-structure of an element, comprising the steps of:

(a) providing a substrate and placing the substrate into a reaction chamber;

(b) mixing at least two reaction sources to obtain a reaction source mixture having at least two isotopes of the element at a predetermined mass proportion and mixed uniformly; and

(c) introducing the reaction source mixture into the reaction chamber, and growing at least one isotope-doped nano-structure segment having the at least two isotopes of the element being mixed uniformly at a predetermined mass proportion on the substrate via a chemical vapor deposition method.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 4, 2010
From: FAN, SHOU-SHAN; LIU, LIANG; JIANG, KAI-LI
To: TSINGHUA UNIVERSITY; HON HAI PRECISION INDUSTRY CO., LTD.
Reel/Frame 024488/0678 →
Priority Claims (1)
CN 2009 1 0239661 · Dec 31, 2009 · national
Continuity (1)
Related Publication 20110159604A1 · Jun 30, 2011