Semiconductor device
The invention provides a semiconductor device having, in each of stacked chip dies, not only vias the number of which corresponds to the number of signals input to and output from a single chip die but also vias the number of which corresponds to the number of signals input to and output from the stacked chip dies, and switches for controlling the input and output to and from the vias. The conduction and non-conduction of the switches are controlled by means of ROMs, whereby signals from the plurality of chip dies stacked can be output in parallel. This eliminates the need of increasing the data transfer speed of each chip die in accordance with the transfer speed of the system.
1. A device, comprising:
a semiconductor substrate;
a plurality of electrodes which pass through the semiconductor substrate;
switches which are connected to the electrodes, respectively;
a first signal line which is commonly connected to the switches; and
a first circuit which is connected to the first signal line, wherein only one of the switches is selectively put into a conductive state.
2. The device as claimed in claim 1 , further comprising: a ROM which selectively puts the switches into the conductive state.
3. The device as claimed in claim 2 , wherein the ROM is set in association with a group which at least data signals of the semiconductor device belong to.
4. The device as claimed in claim 1 , further comprising: a second switch which connects a plurality of the first signal lines to the first circuit.
5. The device as claimed in claim 1 , wherein the first signal line includes a probing terminal which is used only during probing.
6. The device as claimed in claim 5 , further comprising: an ESD protection circuit which is connected to any one of the first signal line and the electrodes.
7. The device as claimed in claim 2 , further comprising:
a plurality of ESD protection circuits which are connected to the electrodes, respectively; and
a third switch which is provided between the switches and the ROM;
a latch circuit;
wherein the third switch is put into the conductive state by a test signal, and the ESD circuits are connected to the first signal line by activation of the test signal.
8. The device as claimed in claim 1 , wherein an operating power supply voltage of the first circuit is variable depending upon the number of semiconductor devices to be stacked.
9. The device as claimed in claim 2 , wherein the first circuit comprises a circuit for inputting and outputting stored information, and the stored information of a plurality of bits (I/O) is input and output through the electrodes.
10. The device as claimed in claim 2 , wherein the first circuit comprises a control signal processing circuit for controlling the semiconductor substrate, and the semiconductor substrate is controlled by the electrodes.
11. A device having a plurality of stacked semiconductor substrates,
wherein each of the semiconductor substrates comprises:
a plurality of electrodes which pass through the semiconductor substrate;
switches which are connected to the electrodes, respectively;
a first signal line which is commonly connected to the switches; and
a first circuit which is connected to the first signal line;
wherein only one of the switches is selectively put into a conductive state, the electrodes of the stacked semiconductor substrates are mutually connected, and
the switches of the stacked semiconductor substrates, which selectively are put into the conductive state, are located at mutually different positions among the semiconductor substrates.
12. The device as claimed in claim 11 , wherein the electrodes connected to the respective switches which are put into the conductive state at the mutually different positions input and output stored information of a plurality of bits (I/O) in parallel.
13. The device as claimed in claim 12 , wherein the electrodes connected to the respective switches which are put into the conductive state at the mutually different positions comprise electrodes for control signals controlling the semiconductor substrates.
14. The device as claimed in claim 11 , further comprising:
a second semiconductor substrate as a controller chip, which controls the semiconductor substrates,
wherein the mutually connected electrodes of the semiconductor substrates are connected to electrodes of the second semiconductor substrate.
15. The device as claimed in claim 14 , wherein the electrodes of the second semiconductor substrate are connected to an external electrode of the semiconductor device.
16. The device as claimed in claim 14 , wherein ESD circuits are respectively connected to the electrodes which are stacked and mutually connected.
17. The device as claimed in claim 11 , wherein the first circuit includes a plurality of output buffers for driving the first signal line, and the output buffers are selectively operated depending upon the number of the stacked semiconductor substrates to change a driving capacity of the first circuit.
18. The device as claimed in claim 11 , wherein an operating power supply voltage of the first circuit is variable depending upon the number of stacked semiconductor substrates.
19. A system comprising:
a plurality of stacked chip dies; and
a controller for controlling the chip dies,
wherein each of the chip dies comprises:
data signal transfer through electrodes, the number of which is determined by a predetermined number of bits and a number of the chip dies when the chip dies are stacked; and
switches for respectively selecting the data signal transfer through electrodes, and
wherein the controller includes a parallel-serial conversion circuit for converting data signals which are input to and output from the chip dies via the data signal transfer through electrodes selected by the switches.
20. The system as claimed in claim 19 , wherein the controller is formed on a chip stacked together with the chip dies.
21. The system as claimed in claim 19 , wherein the controller is provided outside the stacked chip dies.