Magnetic multilayer device, method for producing such a device, magnetic field sensor, magnetic memory and logic gate using such a device

1. A magnetic multilayer device comprising, on a substrate, an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O, wherein:

the number of layer M equals at least two;

the layers M are continuous, have a thickness ranging between 0.3 and 5 nm, and, in the absence of an applied magnetic field, have their magnetization parallel to the plane of the layer in the absence of layers O because of shape anisotropy;

in a temperature range equal to or larger than ambient temperature, there occurs interfacial magnetic anisotropy perpendicular to the plane of the layers at the M/O and O/M interfaces, able to surpass the shape anisotropy and orient the magnetization axis of layers M in a direction substantially perpendicular to the plane of the layers in the absence of any external magnetic field;

the magnetic metallic layers consist of a magnetic element, a magnetic alloy or a multilayer formed by an alternating sequence of non-magnetic and magnetic materials, the latter being selected from the group consisting of Fe, Ni, Co or alloys thereof; and

the oxide, hydride or nitride layers O have a thickness of at least 0.3 nm and are based on elements selected from the group consisting of Al, Mg, Ru, Ta, Cr, Zr, Hf, Ti, V, Si, Cu, W or alloys thereof.

2. A magnetic multilayer device as claimed in claim 1 , wherein the substrate is made of silicon covered by thermally or naturally oxidized silicon to a thickness of 2 to 500 nm.

3. A magnetic multilayer device as claimed in claim 1 , wherein the substrate is made of a transparent material.

4. A magnetic multilayer device as claimed in claim 1 , wherein it comprises a material S that is used as a growth initiator for the first metallic layer M, this material S being selected from the group comprising TiN, CuN, Pt, Ta, Ru, IrMn, PtMn, NiFeCr, oxides and nitrides.

5. A magnetic multilayer device as claimed in claim 1 , wherein at least one of layers M contains added non-magnetic metals Pd or Pt or elements selected from the group comprising Si, C, B, P.

6. A magnetic multilayer device as claim in claim 1 , wherein all the layers M are made of the same magnetic material and all the layers O are made of the same non-magnetic material.

7. A magnetic multilayer device as claimed in claim 1 , wherein all the layers O have the same thickness.

8. A magnetic multilayer device as claimed in claim 1 , wherein the thickness of at least one of layers O is different from the others.

9. A magnetic multilayer device as claimed in claim 4 , wherein:

each layer O has a thickness of 0.3 to 5 nm; and

the number of alternating sequences of layers M and layers O is 1.5 to 20, thus constituting a generic structure from M/O/M to (M/O) 20 .

10. A magnetic multilayer device as claimed in claim 7 , wherein the chemical composition of at least one of magnetic layers M is different from the others.

11. A magnetic multilayer device as claimed in claim 1 , wherein the thickness of at least one of magnetic layers M is different from the others.

12. A magnetic multilayer device as claimed in claim 1 , wherein the chemical composition of at least one of layers O is different from the others.

13. A magnetic multilayer device as claimed in claim 1 , wherein at least one of layers O itself consists of a plurality of layers made of oxide, hydride or nitride.

14. A magnetic multilayer device as claimed in claim 1 , wherein one or several M layers are put in contact of a supplementary layer made of a material capable of inducing an antiferromagnetic exchange coupling with said M layer.

15. A magnetic multilayer device as claimed in claim 1 , wherein its lateral dimensions are less than 1 μm.

16. A magnetic multilayer device comprising:

a substrate;

an alternating sequence of magnetic metallic layers M and oxide, hydride or nitride layers O, the number of layer M equals at least two, the layers M are continuous, have a thickness ranging between 0.3 and 5 nm, and are formed of a magnetic material having its magnetization parallel to the plane of the layer in the absence of layers O and any applied magnetic field because of shape anisotropy,

wherein in a temperature range equal to or larger than ambient temperature, there occurs interfacial magnetic anisotropy perpendicular to the plane of the layers at the M/O and O/M interfaces, able to surpass the shape anisotropy and orient the magnetization of layers M in a direction substantially perpendicular to the plane of the layers M in the absence of an external magnetic field,

wherein the magnetic multilayer device exhibits a Hall resistivity associated with a longitudinal resistivity of the order of 1000 μΩcm and has two stable magnetic states in the absence of any applied magnetic field,

wherein the magnetic metallic layers consist of a magnetic element, a magnetic alloy or a multilayer formed by an alternating sequence of non-magnetic and magnetic materials, the latter being selected from the group consisting of Fe, Ni, Co or alloys thereof, and

wherein the oxide, hydride or nitride layers O have a thickness of at least 0.3 nm and are based on elements selected from the group consisting of Al, Mg, Ru, Ta, Cr, Zr, Hf, Ti, V, Si, Cu, W or alloys thereof.

17. The magnetic multilayer device of claim 16 , wherein the magnetic multilayer device has a Hall resistance of 8Ω, a field sensitivity of approximately 14 Ω/T and changes state when a perpendicular magnetic field of −0.4 T to +0.4 T is applied.

18. The magnetic multilayer device of claim 16 , wherein the magnetic multilayer device has a Hall resistance of 3.5Ω, a field sensitivity of approximately 700 Ω/T and changes state when a perpendicular magnetic field of −6 mT to +6 mT is applied.

19. The magnetic multilayer device of claim 18 , wherein subjecting the magnetic multilayer device to a heat treatment in a rarefied atmosphere at a temperature higher than the temperature at which the layers M and O were deposited, increases the Hall resistance of the magnetic multilayer device to 4.7Ω and increases the perpendicular magnetic field to change state of the magnetic multilayer device to −22 mT to +22 mT.

20. The magnetic multilayer device of claim 16 , wherein subjecting the magnetic multilayer device to a heat treatment in a rarefied atmosphere at a temperature higher than the temperature at which the layers M and O were deposited, increases the Hall resistance of the magnetic multilayer device by 35% and increases the perpendicular magnetic field to change state of the magnetic multilayer device by more than an order of magnitude.

21. The magnetic multilayer device of claim 16 , further comprising a layer of an electrically conducting material that is formed directly on the substrate.

22. The magnetic multilayer device of claim 20 , further comprising a layer S of a growth initiating material having a thickness of 2 nm or less that is formed on a layer of electrically conducting material.