IP Library Granted Patent US 8,274,127
Granted Patent B2
US 8,274,127 · App. 12/494,393 · Granted Sep 25, 2012

Photodiode array for image pickup device

Assignee: Sumitomo Electric Industries, Ltd.
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Quick Facts
Patent No.
US 8,274,127
App. No.
12/494,393
Granted
Sep 25, 2012
Kind
B2
Abstract

A photodiode array includes a substrate of a common read-out control circuit; and a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode. In this photodiode array, each of the photodiodes is isolated from adjacent photodiodes, the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes, and the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit.

Claims (12)

1. A photodiode array comprising:

a substrate of a common read-out control circuit; and

a plurality of photodiodes arrayed on the substrate and each including an absorption layer, and a pair of a first conductive-side electrode and a second conductive-side electrode,

wherein each of the photodiodes is separated from adjacent photodiodes,

the first conductive-side electrodes are provided on first conductivity-type regions and electrically connected in common across all the photodiodes,

the second conductive-side electrodes are provided on second conductivity-type regions and individually electrically connected to read-out electrodes of the read-out control circuit,

the photodiodes are semiconductor multilayer structures formed on a semiconductor substrate,

the semiconductor substrate has been removed or the semiconductor substrate is included in the semiconductor multilayer structure,

each of the second conductivity-type regions is formed by selective diffusion for corresponding photodiode so as to face the absorption layer,

the second conductive-side electrodes are provided on the corresponding second conductivity-type regions,

the second conductive-side electrodes are connected to the corresponding read-out electrodes on the substrate of the read-out control circuit, and

a surface of the semiconductor multilayer structures opposite a surface on which the second conductive-side electrodes are disposed functions as a light-incident surface.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 23, 2009
From: NAGAI, YOUICHI; IGUCHI, YASUHIRO
To: SUMITOMO ELECTRIC INDUSTRIES, LTD.
Reel/Frame 023276/0275 →
Continuity (1)
Related Publication 20100327386A1 · Dec 30, 2010