IP Library Granted Patent US 8,278,749
Granted Patent B2
US 8,278,749 · App. 12/645,969 · Granted Oct 2, 2012

Integrated antennas in wafer level package

Assignee: Infineon Technologies AG
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 8,278,749
App. No.
12/645,969
Granted
Oct 2, 2012
Kind
B2
Abstract

A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Claims (30)

1. A semiconductor module configured to electrically or mechanically couple to an external substrate, comprising:

a package molding compound layer comprising an integrated circuit (IC) device embedded within a package molding compound; and

an interface layer separate from the external substrate, abutting the package molding compound layer, wherein the interface layer comprises

a redistribution layer coupled to the IC device for connecting the IC device externally, wherein the interface layer is disposed between the package molding compound layer and the external substrate;

at least one integrated antenna structure within the interface layer and coupled to the IC device.

2. The module of claim 1 , wherein the interface layer further comprises:

a bonding interconnect structure connected to the redistribution layer within the interface layer, the bonding interconnect structure having three dimensional interconnect structures configured to connect the IC device externally from the package molding compound layer; and

a dielectric coat;

wherein the antenna structure is integrated within the interface layer to the IC device and contacts bond pad connections of the IC device through a feed structure.

3. The module of claim 1 , further comprising:

a bonding interconnect structure comprising surface-mountable solder balls providing external contacts and a mechanical support structure with at least one bond wire; and

a reflector plate.

4. The module of claim 3 , further comprising:

an air cavity located between the external substrate and the interface layer;

wherein the reflector plate is located on a top surface of the external substrate and within the air cavity.

5. The module of claim 4 , wherein the reflector plate is located opposite one side of the air cavity from the integrated antenna structure.

6. The module of claim 4 , wherein the air cavity comprises a filler comprising an epoxy material filling the air cavity, and wherein the interface layer further comprises a metallization layer for integrating the bonding interconnect structure and the integrated antenna structure to the IC device.

7. The module of claim 1 , further comprising a metal layer located on a surface of the package molding compound layer for modulating a field directivity of the integrated antenna structure.

8. A semiconductor module configured to electrically or mechanically couple to an external substrate, comprising:

a first package molding compound layer comprising an integrated circuit (IC) device embedded within the first package molding compound layer;

an interface layer separate from the external substrate, abutting the first package molding compound layer, wherein the interface layer comprises:

a redistribution layer coupled to the IC device; and

at least one antenna structure integrated from within the interface layer and coupled to the IC device; and

a second package molding compound layer comprised of a second package molding compound, abutting the first package molding compound layer and the interface layer.

9. The module of claim 8 , wherein the integrated antenna structure is coupled to the IC device through a feed structure directly connected to the IC device and without a bonding interface structure that is external to bond pad connections of the IC device.

10. The module of claim 8 , further comprising a reflector plate, wherein the interface layer further comprises a bonding interface structure comprising surface-mountable solder balls providing external contacts and a mechanical support structure with at least one bond wire.

11. The module of claim 10 , wherein the reflector plate is located opposite one side of the first package molding compound layer from the interface layer coupled thereto and parallel to the integrated antenna structure embedded within the interface layer.

12. The module of claim 10 , wherein the second package molding compound layer surrounds surfaces comprising the interface layer, the first package molding compound layer with the IC device, the bonding interface structure, and/or the reflector plate.

13. The module of claim 8 , wherein the second package molding compound layer comprises an opening surrounding the interface layer where the second package molding compound layer is absent.

14. The module of claim 8 , further comprising a metal layer located on a surface of the second package molding compound layer for modulating a field directivity of the integrated antenna structure.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 23, 2009
From: LACHNER, RUDOLF; MAURER, LINUS; WOJNOWSKI, MACIEJ
To: INFINEON TECHNOLOGIES AG
Reel/Frame 023694/0853 →
Continuity (2)
Provisional Application 61148584 · Jan 30, 2009
Related Publication 20100193935A1 · Aug 5, 2010