Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system
A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.
1. A method of forming a semiconductor device, the method comprising:
forming a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween on a first substrate;
disposing a second substrate on the second semiconductor layer;
removing the first substrate;
forming a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween on a third substrate;
disposing the first semiconductor layer on the fourth semiconductor layer; and
removing the third substrate.
2. The method of claim 1 , further comprising forming a conductive layer on the first semiconductor layer.
3. The method of claim 2 , further comprising forming a bonding between the conductive layer and the fourth semiconductor layer.
4. The method of claim 2 , further comprising forming a first electrode on the conductive layer, a second electrode on the third semiconductor layer, and a third electrode on the second semiconductor layer.
5. The method of claim 4 , wherein the third electrode is reflective.
6. The method of claim 2 , wherein the conductive layer is transparent.
7. A method of forming a semiconductor device, the method comprising:
preparing a first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween;
preparing a second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween; and
disposing the first semiconductor layer on the fourth semiconductor layer; and
electrically connecting the first semiconductor layer to the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types.
8. The method of claim 7 , further comprising a conductive layer disposed on the first semiconductor layer.
9. The method of claim 8 , further comprising forming a first electrode on the conductive layer, a second electrode on the third semiconductor layer, and a third electrode on the second semiconductor layer.
10. The method of claim 9 , wherein the third electrode is reflective.
11. The method of claim 8 , wherein the conductive layer is transparent.
12. The method of claim 9 , further comprising preparing a first substrate having a first pad and a second pad, and connecting the second electrode and the second pad and connecting the first electrode and the first pad.
13. The method of claim 12 , further comprising encapsulating the first light emitting chip and the second light emitting chip in an encapsulant.
14. The method of claim 13 , further comprising disposing a light converting material in the encapsulant.