Method for forming semiconductor layer and method for manufacturing light emitting device

1. A method for forming a semiconductor layer comprising,

preparing a growth substrate;

selectively forming a projection pattern on the growth substrate;

forming a semiconductor layer on the growth substrate and the projection pattern; and

selectively removing the semiconductor layer including the projection pattern,

wherein the projection pattern is formed to have a peak on an upper portion thereof to generate a dislocation in the semiconductor layer.

2. The method for forming a semiconductor layer according to the claim 1 , wherein the growth substrate is defined as a chip region and a scribing region, and the projection pattern is arranged on the scribing region.

3. The method for forming a semiconductor layer according to the claim 2 , wherein the projection pattern is arranged on an intersection region where the scribing region extending into a first direction and the scribing region extending into a second direction perpendicular to the first direction cross each other.

4. The method for forming a semiconductor layer according to the claim 1 , wherein the semiconductor layer is formed to substantially cover the projection pattern.

5. The method for forming a semiconductor layer according to the claim 1 , wherein the first conductive type semiconductor layer is formed to substantially cover the projection pattern.

6. A method for manufacturing a light emitting device comprising,

preparing a growth substrate;

selectively forming a projection pattern on the growth substrate;

forming a first conductive type semiconductor layer on the growth substrate and the projection pattern;

forming an active layer on the first conductive type semiconductor layer;

forming a second conductive type semiconductor layer on the active layer; and

executing an isolation etching for selectively removing the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer including the projection pattern; and

forming a peak on an upper portion of the projection pattern to generate a dislocation in the semiconductor layer.

7. The method for manufacturing a light emitting device according to the claim 6 , further comprising:

forming a conductive support substrate on the second conductive type semiconductor layer, and then removing the growth substrate before executing the isolation etching.

8. The method for manufacturing a light emitting device according to the claim 7 , further comprising:

forming a passivation layer on the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer, and forming an electrode layer on the first conductive type semiconductor layer after executing the isolation etching.

9. The method for manufacturing a light emitting device according to the claim 6 , wherein the growth substrate is defined as a chip region and a scribing region, and the projection pattern is arranged on the scribing region.

10. The method for manufacturing a light emitting device according to the claim 9 , wherein the projection pattern is arranged on an intersection region where a scribing region extending into a first direction and a scribing extending into a second direction perpendicular to the first direction cross each other.

11. The method for manufacturing a light emitting device according to the claim 6 , wherein the first conductive type semiconductor layer, the active layer, and the second conductive type semiconductor layer include a GaN-based semiconductor layer, respectively.

12. The method for manufacturing a light emitting device according to the claim 6 , wherein the projection pattern includes an aluminum oxidation layer.