Semiconductor light emitting device and method of fabricating the same
Provided are a semiconductor light emitting device and a method of fabricating the same. The semiconductor light emitting device includes a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer. The first conductive type semiconductor layer includes an insulation layer including protrusions having a predetermined interval and a void between the protrusions of the insulation layer. The active layer is disposed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is disposed on the active layer.
1. A semiconductor light emitting device, comprising:
a first conductive type semiconductor layer comprising a first semiconductor layer and a second semiconductor layer on the first semiconductor layer;
an insulation layer between the first semiconductor layer and the second semiconductor layer, the insulation layer having a recess;
an active layer on the first conductive type semiconductor layer; and
a second conductive type semiconductor layer on the active layer,
wherein a portion of the first conductive type semiconductor layer is disposed in the recess.
2. The semiconductor light emitting device according to claim 1 , wherein the insulation layer comprises a MgN layer.
3. The semiconductor light emitting device according to claim 1 , wherein the insulation layer comprises a nitride semiconductor doped with n-type dopants and p-type dopants.
4. The semiconductor light emitting device according to claim 1 , further comprising:
a first electrode layer on the first semiconductor layer; and
a second electrode layer connected to the second semiconductor layer.
5. The semiconductor light emitting device according to claim 1 , wherein a dislocation density of the second semiconductor layer is less than that of the first semiconductor layer.
6. The semiconductor light emitting device according to claim 1 ,
wherein the recess comprises a plurality of recesses spaced apart from each other in the insulation layer, and
wherein the portion of the first conductive type semiconductor layer comprises a plurality of portions disposed in the plurality of recesses, respectively.
7. The semiconductor light emitting device according to claim 6 , further comprising:
a void in at least one of the plurality of portions.
8. The semiconductor light emitting device according to claim 7 , wherein the void comprises a plurality of voids disposed in the plurality of portions, respectively.
9. The semiconductor light emitting device according to claim 7 , wherein the insulation layer has a thickness ranging from about 0.0001 μm to about 1 μm.
10. The semiconductor light emitting device according to claim 1 , wherein at least one of the first conductive type semiconductor layer and the insulation layer includes a nitride-based material.
11. A semiconductor light emitting device, comprising:
a first conductive type semiconductor layer comprising a first semiconductor layer and a second semiconductor layer on the first semiconductor layer, the second semiconductor layer comprising a void;
an active layer on the second semiconductor layer;
a second conductive type semiconductor layer on the active layer; and
a first electrode layer physically contacted with the first semiconductor layer,
wherein the second semiconductor layer includes a plurality of portions spaced apart from each other, and
wherein the void is disposed in at least one of the plurality of portions.
12. The semiconductor light emitting device according to claim 11 , further comprising:
an insulation layer including a plurality of recesses having a predetermined interval, the insulation layer located between the second semiconductor layer and the first semiconductor layer,
wherein the plurality of portions of the second semiconductor layer are disposed in the plurality of the recesses of the insulation layer, respectively.
13. The semiconductor light emitting device according to claim 11 , further comprising:
a third semiconductor layer between the second semiconductor layer and the active layer,
wherein at least one of the first to third semiconductor layers comprises an n-type semiconductor layer.
14. The semiconductor light emitting device according to claim 12 ,
wherein the insulation layer comprises a MgN layer, and
wherein the MgN layer has a thickness ranging from about 0.0001 μm to about 1 μm.
15. The semiconductor light emitting device according to claim 11 , wherein the plurality of portions is physically contacted with the first semiconductor layer.
16. The semiconductor light emitting device according to claim 11 , wherein at least one of the first conductive type semiconductor layer and the insulation layer is a nitride-based layer.
17. The semiconductor light emitting device according to claim 11 , wherein at least one of the first conductive type semiconductor layer and the insulation layer includes a nitride-based material.
18. A semiconductor light emitting device, comprising:
a first conductive type semiconductor layer comprising a plurality of semiconductor layers;
a second conductive type semiconductor layer on the first conducive type semiconductor layer;
an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer;
an insulation layer between the plurality of semiconductor layers, the insulation layer including a plurality of first protrusions; and
a plurality of recesses between the plurality of first protrusions,
wherein the first conductive type semiconductor layer includes a plurality of second protrusions located in the plurality of recesses.
19. The semiconductor light emitting device according to claim 18 , further comprising:
a void in at least one of the plurality of second protrusions,
wherein the plurality of second protrusions has a pitch ranging from about 10 Å to about 3 μm.
20. The semiconductor light emitting device according to claim 18 , wherein the insulation layer is formed of a different material from the plurality of semiconductor layers.