Nonvolatile memory device and related method of operation
A flash memory device comprises alternately arranged odd and even memory cells. The odd and even memory cells are connected to corresponding odd and even bitlines, which are connected to corresponding odd and even page buffers. In a read operation of the flash memory device, data is sensed at two different times via the odd and even bitlines. In certain embodiments, data is read from the odd page buffers while data is being sensed via the even bit lines, or vice versa.
1. A method of operating a flash memory device comprising first through fourth memory cells arranged in a sequence ordered from the first memory cell to the fourth memory cell and connected to a common wordline, first through fourth bitlines connected to the respective first through fourth memory cells, and first through fourth page buffers connected to the respective first through fourth bitlines, the method comprising:
sensing data stored in the first and third memory cells and storing the sensed data in the first and third page buffers; and
reading the sensed data stored in the first and third page buffers while sensing data stored in the second and fourth memory cells and storing the sensed data in the second and fourth page buffers.
2. The method of claim 1 , further comprising:
simultaneously storing data to be programmed in the first through fourth memory cells in the first through fourth page buffers.
3. The method of claim 2 , further comprising:
simultaneously programming the data stored in the first through fourth page buffers in the first through fourth memory cells.
4. The method of claim 1 , further comprising:
receiving column addresses corresponding to the first and third memory cells prior to sensing the first and third memory cells, and thereafter receiving column addresses corresponding to the second and fourth memory cells prior to sensing the second and fourth memory cells.
5. The method of claim 1 , wherein the flash memory device generates a ready signal while reading the data stored in the first and third page buffers.
6. The method of claim 5 , wherein the flash memory device generates a busy signal while sensing the data stored in the second and fourth memory cells.