IP Library Granted Patent US 8,310,679
Granted Patent B2
US 8,310,679 · App. 13/318,601 · Granted Nov 13, 2012

Apparatus and methods for sensing or imaging using stacked thin films

Assignee: Indian Institute of Science
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Quick Facts
Patent No.
US 8,310,679
App. No.
13/318,601
Granted
Nov 13, 2012
Kind
B2
Abstract

Technologies are generally described for methods and systems for sensing or imaging. The apparatus includes a stack of a plurality of thin films, such as polymer thin films. The stack has a substantially imaginary total reflectance coefficient.

Claims (343)

1. An apparatus for sensing or imaging with light at a wavelength λ, the apparatus comprising:

a stack including a plurality of thin films;

wherein the stack has a substantially imaginary total reflectance coefficient for the light at the wavelength λ,

wherein the substantially imaginary total reflectance coefficient is a total reflectance coefficient for which the real part of the reflectance is substantially zero, and the imaginary part of the reflectance is substantially nonzero.

2. The apparatus of claim 1 , wherein the plurality of thin films comprise polymer thin films.

3. The apparatus of claim 1 , wherein the plurality of thin films include a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

4. The apparatus of claim 3 , wherein the stack further includes:

a top layer; and

a substrate.

5. The apparatus of claim 4 , wherein the top layer has a refractive index (n l ), a thickness (d l ), and a reflectance (r l ) selected such that they satisfy the following equations:

r

s

=

r

s

-

r

l

1

-

r

s

r

l

and

r

net

=

r

l

+

r

s

-

j

2

ϕ

l

1

+

r

l

r

s

-

j

2

ϕ

l

=

±

j

β

[

r

s

(

1

+

r

l

2

)

]

2

-

[

r

l

(

1

+

r

s

2

)

]

2

(

1

-

r

l

2

r

s

2

)

2

=

β

2

cos

(

4

π

n

l

d

l

λ

)

=

-

(

r

l

r

s

)

(

1

+

r

s

2

1

+

r

l

2

)

wherein β is an amplitude of a total reflectance coefficient r net of the stack including the top layer, wherein the total reflectance coefficient is imaginary and has a form of ±jβ, wherein j is the imaginary unit and ±j=√−1, and r s and r s ′ are the reflectance of the substrate and the plurality of bi-layers combined, calculated with air and the top layer as the ambient medium, respectively.

6. The apparatus of claim 5 , wherein the plurality of thin films include a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

7. The apparatus of claim 6 , wherein the high refractive index is about 1.45-1.65, and the low refractive index is lower than the high refractive index.

8. The apparatus of claim 6 , wherein the layer of high refractive index and the layer of low refractive index each have a thickness of approximately ¼ of the wavelength λ.

9. The apparatus of claim 1 , wherein the apparatus is configured to sense or image a sample disposed over the stack through a change in reflectance caused by the presence of the sample.

10. The apparatus of claim 9 , wherein the sample comprises one of a biological sample, a chemical material, or an optical material, and wherein the apparatus is configured as one of a biosensor, a chemical sensor, or a color sensor.

11. A method of making a sensor or an imager, the method comprising:

selecting materials for a top layer, a plurality of thin films, and a substrate; and

forming a stack with the top layer, the plurality of thin films, and the substrate,

wherein the materials are selected such that stack has a substantially imaginary total reflectance for light at a wavelength λ used for imaging or sensing, and

wherein the substantially imaginary total reflectance coefficient is a total reflectance coefficient for which the real part of the reflectance is substantially zero, and the imaginary part of the reflectance is substantially nonzero.

12. The method of claim 11 , wherein the plurality of thin films comprise polymer thin films.

13. The method of claim 11 , wherein the forming comprises disposing the plurality of thin films as a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

14. The method of claim 13 , wherein the layer of high refractive index and the layer of low refractive index each have a thickness of approximately ¼ of the wavelength of the light used for sensing in the respective layer.

15. The method of claim 11 , wherein the selecting comprises selecting a refractive index (n l ), a thickness (d l ), and a reflectance (r l ) of the top layer such that they satisfy the following equations:

r

s

=

r

s

-

r

l

1

-

r

s

r

l

and

r

net

=

r

l

+

r

s

-

j

2

ϕ

l

1

+

r

l

r

s

-

j

2

ϕ

l

=

±

j

β

[

r

s

(

1

+

r

l

2

)

]

2

-

[

r

l

(

1

+

r

s

2

)

]

2

(

1

-

r

l

2

r

s

2

)

2

=

β

2

cos

(

4

π

n

l

d

l

λ

)

=

-

(

r

l

r

s

)

(

1

+

r

s

2

1

+

r

l

2

)

wherein β is an amplitude of a total reflectance coefficient r net of the stack including the top layer, wherein the total reflectance coefficient is imaginary and has a form of ±jβ, wherein j is the imaginary unit and ±j=√−1, and r s and r s ′ are the reflectance of the substrate and the plurality of bi-layers combined, calculated with air and the top layer as the ambient medium, respectively, and wherein λ is the wavelength of the light used for imaging or sensing.

16. A method of sensing or imaging a sample, the method comprising:

providing a stack comprising a plurality of polymer thin films, wherein the stack has a substantially imaginary total reflectance for light at a wavelength λ used for imaging or sensing, wherein the substantially imaginary total reflectance coefficient is a total reflectance coefficient for which the real part of the reflectance is substantially zero, and the imaginary part of the reflectance is substantially nonzero;

directing a beam of light toward the stack in the absence of the sample;

measuring the reflectance of the stack in the absence of the sample;

disposing a sample over the stack;

measuring the reflectance of the stack in the presence of the sample; and

obtaining the difference in reflectance of the stack in the presence and absence of the sample.

17. The method of claim 16 , wherein the plurality of thin films include a plurality of bi-layers, wherein each of the plurality of bi-layers comprises a layer of high refractive index and a layer of low refractive index.

18. The method of claim 17 , wherein the layer of high refractive index and the layer of low refractive index each have a thickness of approximately ¼ of the wavelength λ of the light used for imaging or sensing in the respective layer.

Assignments (4)
RELEASE OF SECURITY INTEREST IN PATENTS, RECORDED ON JANUARY 29, 2019 AT REEL 048373 FRAME 0217 Recorded Sep 22, 2025
From: CRESTLINE DIRECT FINANCE, L.P., AS COLLATERAL AGENT
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 072936/0464 →
RELEASE OF SECURITY INTEREST Recorded Jul 31, 2019
From: CRESTLINE DIRECT FINANCE, L.P.
To: EMPIRE TECHNOLOGY DEVELOPMENT LLC
Reel/Frame 049924/0794 →
SECURITY INTEREST Recorded Jan 29, 2019
From: EMPIRE TECHNOLOGY DEVELOPMENT LLC
To: CRESTLINE DIRECT FINANCE, L.P.
Reel/Frame 048373/0217 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 3, 2011
From: VARMA, MANOJ
To: INDIAN INSTITUTE OF SCIENCE
Reel/Frame 027170/0584 →
Continuity (1)
Related Publication 20120194819A1 · Aug 2, 2012