Electronic device and method for producing the same
An electronic device including a first electrode that is provided on a substrate and includes an Mo—Nb alloy, an insulating film disposed on the first electrode, and a second electrode disposed on the first electrode with at least the insulating film interposed between the first electrode and the second electrode; and a method for producing the electronic device are provided.
1. An electronic device comprising:
a first electrode that is provided on a substrate and includes an Mo—Nb alloy;
an insulating film disposed on the first electrode; and
a second electrode disposed on the first electrode with at least the insulating film interposed between the first electrode and the second electrode; wherein the electronic device is a field-effect transistor, in which:
the first electrode is a gate electrode;
the second electrode is a source electrode and a drain electrode; and
an active layer having an oxide semiconductor as the principal constituent is provided between the source electrode and the drain electrode; and wherein
the oxide semiconductor comprises an amorphous oxide containing at least one selected from the group consisting of In, Zn, and Ga.
2. The electronic device according to claim 1 , wherein a taper angle of an edge cross section of the first electrode is less than 50°.
3. The electronic device according to claim 1 , wherein a taper angle of an edge cross section of the first electrode is less than 40°.
4. The electronic device according to claim 1 , wherein the Mo—Nb alloy is amorphous.
5. The electronic device according to claim 1 , wherein a surface roughness Ra of the first electrode is 0.6 nm or less.
6. The electronic device according to claim 1 , wherein a thickness of the first electrode is from 10 nm to 100 nm.
7. The electronic device according to claim 1 , wherein the substrate has flexibility.
8. The electronic device according to claim 1 , wherein a thickness of the substrate is from 50 μm to 500 μm.
9. The electronic device according to claim 1 , wherein a film thickness of the insulating layer is from 10 nm to 1000 nm.
10. A method for producing an electronic device, the method comprising:
forming, on a substrate, a first electrode that includes an Mo—Nb alloy, by patterning a metal film that is formed on the substrate and includes the Mo—Nb alloy;
forming an insulating film, that covers at least a part of the first electrode, in accordance with a sputtering method; and
forming a second electrode so as to be disposed on the first electrode with at least the insulating film interposed between the first electrode and the second electrode; wherein the electronic device is a field-effect transistor, in which:
the first electrode is a gate electrode;
the second electrode is a source electrode and a drain electrode; and
an active layer having an oxide semiconductor as the principal constituent is provided between the source electrode and the drain electrode; and wherein
the oxide semiconductor comprises an amorphous oxide containing at least one selected from the group consisting of In, Zn, and Ga.