IP Library Granted Patent US 8,339,036
Granted Patent B2
US 8,339,036 · App. 13/441,210 · Granted Dec 25, 2012

Organic electroluminescent device

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,339,036
App. No.
13/441,210
Granted
Dec 25, 2012
Kind
B2
Abstract

An organic electroluminescence device of the present invention adapts a new concept in its configuration to improve its efficiency in addition to obtain a high reliability and good yielding. The organic electroluminescent device having an electroluminescent film containing an organic material capable of causing an electroluminescence and being arranged between a first electrode and a second electrode, includes: a carrier, generation layer, which is a floating electrode, is embodied in the electroluminescent film; an insulting film between the first electrode and the electroluminescent film, and an insulating film between the second electrode and the electroluminescent film, wherein the organic electroluminescent device is driven by an alternating current bias.

Claims (89)

1. A light-emitting device comprising:

a first electrode;

a first electroluminescent layer over the first electrode;

a second electroluminescent layer over the first electroluminescent layer;

a carrier generation layer between the first electroluminescent layer and the second electroluminescent layer; and

a second electrode over the second electroluminescent layer,

wherein a first insulating material is provided between the first electrode and the first electroluminescent layer, and

wherein a second insulating material is provided between the second electrode and the second electroluminescent layer.

2. The light-emitting device according to claim 1 ,

wherein the first insulating material is a first insulating film, and

wherein the second insulating material is a second insulating film.

3. The light-emitting device according to claim 1 ,

wherein the carrier generation layer is electrically floating.

4. The light-emitting device according to claim 1 ,

wherein the light-emitting device is configured to be driven by an alternating current bias.

5. The light-emitting device according to claim 1 ,

wherein at least one of the first insulating material and the second insulating material comprises an inorganic insulator selected from the group consisting of aluminum oxide and calcium fluoride.

6. The light-emitting device according to claim 1 ,

wherein at least one of the first insulating material and the second insulating material comprises an organic insulator selected from the group consisting of poly-paraxylylene, poly(vinyl phenol) and poly(4-vinyl phenol).

7. The light-emitting device according to claim 1 ,

wherein an first electroluminescent color emitted from the first electroluminescent layer is different from an second electroluminescent color emitted from the second electroluminescent layer.

8. The light-emitting device according to claim 1 ,

wherein at least one of the first insulating material and the second insulating material has transparency.

9. The light-emitting device according to claim 1 ,

wherein a buffer layer is in contact with the carrier generation layer, and

wherein the buffer layer is selected from the group consisting of copper phthalocyanine, LiF and lithium oxide.

10. A lighting according to claim 1 .

11. A light-emitting device comprising:

a first electrode;

a first electroluminescent layer over the first electrode;

a second electroluminescent layer over the first electroluminescent layer;

a carrier generation layer between the first electroluminescent layer and the second electroluminescent layer; and

a second electrode over the second electroluminescent layer,

wherein a first insulating material is provided between the first electrode and the first electroluminescent layer,

wherein a second insulating material is provided between the second electrode and the second electroluminescent layer, and

wherein the carrier generation layer comprises an organic compound mixture including an electron acceptor and an electron donor.

12. The light-emitting device according to claim 11 ,

wherein the first insulating material is a first insulating film, and

wherein the second insulating material is a second insulating film.

13. The light-emitting device according to claim 11 ,

wherein the carrier generation layer is electrically floating.

14. The light-emitting device according to claim 11 ,

wherein the light-emitting device is configured to be driven by an alternating current bias.

15. The light-emitting device according to claim 11 ,

wherein at least one of the first insulating material and the second insulating material comprises an inorganic insulator selected from the group consisting of aluminum oxide and calcium fluoride.

16. The light-emitting device according to claim 11 ,

wherein at least one of the first insulating material and the second insulating material comprises an organic insulator selected from the group consisting of poly-paraxylylene, poly(vinyl phenol) and poly(4-vinyl phenol).

17. The light-emitting device according to claim 11 ,

wherein an first electroluminescent color emitted from the first electroluminescent layer is different from an second electroluminescent color emitted from the second electroluminescent layer.

18. The light-emitting device according to claim 11 ,

wherein at least one of the first insulating material and the second insulating material has transparency.

19. The light-emitting device according to claim 11 ,

wherein a buffer layer is in contact with the carrier generation layer, and

wherein the buffer layer is selected from the group consisting of copper phthalocyanine, LiF and lithium oxide.

20. The light-emitting device according to claim 11 ,

wherein the electron acceptor includes TCNQ or a nickel complex, and

wherein the electron donor includes TTF.

21. A lighting according to claim 11 .

22. A light-emitting device comprising:

a first electrode;

a first electroluminescent layer over the first electrode;

a second electroluminescent layer over the first electroluminescent layer;

a carrier generation layer between the first electroluminescent layer and the second electroluminescent layer; and

a second electrode over the second electroluminescent layer,

wherein a first insulating material is provided between the first electrode and the first electroluminescent layer,

wherein a second insulating material is provided between the second electrode and the second electroluminescent layer, and

wherein the carrier generation layer comprises an organic conductive mixture including a p-type semiconductor and an n-type semiconductor.

23. The light-emitting device according to claim 22 ,

wherein the first insulating material is a first insulating film, and

wherein the second insulating material is a second insulating film.

24. The light-emitting device according to claim 22 ,

wherein the carrier generation layer is electrically floating.

25. The light-emitting device according to claim 22 ,

wherein the light-emitting device is configured to be driven by an alternating current bias.

26. The light-emitting device according to claim 22 ,

wherein at least one of the first insulating material and the second insulating material comprises an inorganic insulator selected from the group consisting of aluminum oxide and calcium fluoride.

27. The light-emitting device according to claim 22 ,

wherein at least one of the first insulating material and the second insulating material comprises an organic insulator selected from the group consisting of poly-paraxylylene, polyvinyl phenol) and poly(4-vinyl phenol).

28. The light-emitting device according to claim 22 ,

wherein an first electroluminescent color emitted from the first electroluminescent layer is different from an second electroluminescent color emitted from the second electroluminescent layer.

29. The light-emitting device according to claim 22 ,

wherein at least one of the first insulating material and the second insulating material has transparency.

30. The light-emitting device according to claim 22 ,

wherein a buffer layer is in contact with the carrier generation layer, and

wherein the buffer layer is selected from the group consisting of copper phthalocyanine, LiF and lithium oxide.

31. The light-emitting device according to claim 22 ,

wherein the p-type semiconductor includes a phthalocyanine based compound,

wherein the n-type semiconductor includes F16-copper phthalocyanine, PV, Me-PTC or PTCAD.

32. A lighting according to claim 22 .

Priority Claims (1)
JP 2002-233526 · Aug 9, 2002 · national
Continuity (3)
Continuation 11928036 · Oct 30, 2007
Continuation 10628701 · Jul 28, 2003
Related Publication 20120193616A1 · Aug 2, 2012