Crosslinkable hole-transporting materials for organic light-emitting devices

1. A compound selected from the group consisting of:

(a) tris(4-carbazole)triphenylamine-tri(trifluorovinyl ether),

(b) tris(4-(3-n-butyl-carbazole))triphenylamine-tri(trifluorovinyl ether),

(c) tris(4-carbazole)triphenylamine-bi(vinyl benzyl ether),

(d) N,N-diphenyl-N,N-bis-(3-methylphenyl)-(1,1′)-biphenyl-4,4′-diamine-bis(vinyl benzyl ether),

(e) bis-N,N-diphenyl-N,N-bis-(3-methylphenyl)-(1,1′)-biphenyl-4,4′-diamine-bi(vinyl benzyl ether),

(f) N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine-bis(vinyl benzyl ether), and

(g) bis-N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine-bis(vinyl benzyl ether).

2. A compound having the formula:

wherein

R 1a is Ar 1a or Ar 1a -(L 1a ) n -L;

R 1b is Ar 1b or Ar 1b -(L 1b ) n -L;

R 2a is Ar 2a or Ar 2a -(L 2a ) o -L;

R 2b is Ar 2b or Ar 2b -(L 2b ) o -L;

R 3a is Ar 3a or Ar 3a -(L 3a ) p -L;

R 3b is Ar 3b or Ar 3b -(L 3b ) p -L;

Ar 1a , Ar 1b , Ar 2a , Ar 2b , Ar 3a , and Ar 3b are independently selected from unsubstituted and substituted aryl groups;

L 1a , L 1b , L 2a , L 2b , L 3a , and L 3b are linker moieties that covalently couple L to Ar 1a , Ar 1b , Ar 2a , Ar 2b , Ar 3a , and Ar 3b , respectively;

n, o, and p are independently selected from 0 or 1;

L is a crosslinkable moiety, and

wherein the compound has two or more L groups.

3. The compound of claim 2 , wherein Ar 1a , Ar 1b , Ar 2a , Ar 2b , Ar 3a , and Ar 3b are selected from the group consisting of substituted or unsubstituted phenyl, substituted or unsubstituted naphthyl, and substituted or unsubstituted 4-carbazole phenyl.

4. The compound of claim 2 , wherein the crosslinkable moiety is selected from the group consisting of trifluorovinyl ether and vinyl benzyl ether.

5. A hole-transporting layer, comprising a crosslinked hole-transporting material derived from a compound of claim 2 .

6. A hole-transporting bilayer structure, comprising:

(a) a first layer comprising a crosslinked hole-transporting material and having a first solid state ionization potential;

(b) a second layer comprising a crosslinked hole-transporting material and having a second solid state ionization potential,

wherein the first solid state ionization potential is less than the second solid state ionization potential, and

wherein at least one of the first or second layers comprises a crosslinked hole-transporting material derived from a compound of claim 2 .

7. The structure of claim 6 , wherein the difference between the second solid state ionization potential and the first solid state ionization potential is from about 0.2 eV to about 0.4 eV.

8. The structure of claim 6 , wherein the first layer comprises N,N-diphenyl-N,N-bis-(3-methylphenyl)-(1,1′)-biphenyl-4,4′-diamine moieties or N,N′-diphenyl-N,N′-bis(1-naphthyl)-1,1′-biphenyl-4,4′-diamine moieties.

9. An integrated hole-injection and hole-transporting layer, comprising:

(a) a hole-injection layer, and

(b) a hole-transporting layer, wherein the hole-transporting layer comprises a crosslinked hole-transporting material derived from a compound of claim 2 , and wherein the crosslinked hole-transporting material is formed by crosslinking on the surface of the hole-injection layer.

10. A device, comprising:

(a) an anode;

(b) a cathode;

(c) an emissive layer intermediate the anode and the cathode; and

(d) a hole-transporting layer intermediate the anode and the emissive layer, wherein the hole-transporting layer comprises a crosslinked hole-transporting material derived from a compound of claim 2 .

11. A device, comprising:

(a) an anode;

(b) a cathode;

(c) an emissive layer intermediate the anode and the cathode; and

(d) a hole-transporting layer intermediate the anode and the emissive layer, wherein the hole-transporting layer comprises a bilayer structure comprising:

(i) a first layer comprising a crosslinked hole-transporting material and having a first solid state ionization potential;

(ii) a second layer comprising a crosslinked hole-transporting material and having a second solid state ionization potential,

wherein the first solid state ionization potential is less than the second solid state ionization potential, and

wherein at least one of the first or second layers comprises a crosslinked hole-transporting material derived from a compound of claim 2 .

12. A device, comprising:

(a) an anode;

(b) a cathode;

(c) an emissive layer intermediate the anode and the cathode; and

(d) an integrated hole-injection and hole-transporting layer intermediate the anode and the emissive layer, wherein the integrated hole-injection and hole-transporting layer comprises a hole-injection layer, and a hole-transporting layer, wherein the hole-transporting layer comprise crosslinked hole-transporting material derived from a compound of claim 2 .