Silicon dioxide layer deposited with BDEAS
A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.
1. A method of forming a multilayer etch-resistant stack on a substrate, the method comprising:
(a) forming on the substrate, a patterned resist layer having a plurality of resist features that are spaced apart from one another; and
(b) depositing a silicon dioxide layer on the resist features of the patterned resist layer without forming a direct plasma or a remote plasma by:
(i) placing the substrate with the patterned resist layer in a process zone;
(ii) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas.
2. A method according to claim 1 wherein the resist features comprise top surfaces, sidewalls, and spacing gaps therebetween, and wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features.
3. A method according to claim 2 wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features such that the ratio of a sidewall thickness (Ts) of the silicon dioxide layer to a top thickness (Tt) of the silicon dioxide layer is from about 0.95:1 to about 1:1.
4. A method according to claim 1 wherein (b) comprises maintaining the substrate at a temperature of less than 70° C.
5. A method according to claim 1 wherein (b) comprises maintaining the substrate at about room temperature.
6. A method according to claim 1 wherein the oxygen-containing gas comprises ozone.
7. A method according to claim 6 comprising generating the ozone by passing oxygen through an ozone generator.
8. A method according to claim 1 comprising generating the BDEAS by flowing carrier gas through a vaporizer to vaporize liquid BDEAS.
9. A method according to claim 1 comprising introducing the BDEAS and oxygen-containing gases through separate gas conduits so that the gases mix in a mixing zone immediately above the process zone.
10. A method according to claim 9 comprising maintaining the mixing zone at a temperature of at least 90° C.
11. A method according to claim 1 wherein (a) comprises forming a resist layer comprising photoresist, exposing the photoresist layer to a pattern of light, and developing the exposed photoresist layer.
12. A method of forming a multilayer etch-resistant stack on a substrate, the method comprising:
(a) forming on the substrate, a patterned resist layer having a plurality of resist features that are spaced apart from one another;
(b) depositing a silicon dioxide layer on the patterned resist layer without forming a plasma by:
(i) placing the substrate with the patterned resist layer in a process zone; and
(ii) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas comprising ozone.
13. A method according to claim 12 wherein the resist features comprise top surfaces, sidewalls, and spacing gaps therebetween, and wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features.
14. A method according to claim 13 wherein (b) comprises depositing a silicon dioxide layer that covers the top surfaces and sidewalls of the resist features such that the ratio of a sidewall thickness (Ts) of the silicon dioxide layer to a top thickness (Tt) of the silicon dioxide layer is from about 0.95:1 to about 1:1.
15. A method according to claim 12 wherein (b) comprises maintaining the substrate at a temperature of less than 70° C.
16. A method according to claim 12 wherein the oxygen-containing gas comprises ozone.
17. A method according to claim 12 comprising generating the BDEAS by flowing carrier gas through a vaporizer to vaporize liquid BDEAS.
18. A method according to claim 12 comprising introducing the BDEAS and oxygen-containing gases through separate gas conduits so that the gases mix in a mixing zone immediately above the process zone.
19. A method according to claim 18 comprising maintaining the mixing zone at a temperature of at least 90° C.
20. A method of forming a multilayer etch-resistant stack on a substrate, the method comprising:
(a) forming on the substrate, a patterned resist layer having a plurality of resist features that are spaced apart from one another;
(b) placing the substrate with the patterned resist layer in a process zone;
(c) introducing into the process zone, a process gas comprising BDEAS and an oxygen-containing gas comprising ozone;
(d) depositing a silicon dioxide layer on the patterned resist layer without energizing the process gas.