Method for manufacturing a semiconductor device having a silicide region comprised of a silicide of a nickel alloy
To provide a semiconductor device which can reduce an electrical resistance between a plug and a silicide region, and a manufacturing method thereof. At least one semiconductor element having a silicide region, is formed over a semiconductor substrate. An interlayer insulating film is formed over the silicide region. A through hole having an inner surface including a bottom surface comprised of the silicide regions is formed in the interlayer insulating film. A Ti (titanium) film covering the inner surface of the hole is formed by a chemical vapor deposition method. At least a surface of the Ti film is nitrided so as to forma barrier metal film covering the inner surface. A plug is formed to fill the through hole via the barrier metal film.
1. A semiconductor device, comprising:
a semiconductor substrate;
at least one semiconductor element formed over the semiconductor substrate, each of said at least one semiconductor element including a silicide region comprised of a silicide of an alloy of Ni and at least one element X selected from the group comprising Pt, V, Pd, Zr, Hf and Nb;
an interlayer insulating film provided over said at least one semiconductor element, said interlayer insulating film being provided with a through hole having an inner surface including a side comprised of the interlayer insulating film and a bottom surface comprised of the silicide region;
a barrier metal film including a TiN film covering the inner surface;
a plug filling the through hole via the barrier metal film; and
an intermediate film formed between the silicide region and the barrier metal film,
wherein a total concentration of Ti—Si—O—N bond and Ti—X—Si—O—N bond in the intermediate film is higher than that of Ti—Ni—O—N bond.
2. The semiconductor device according to claim 1 , wherein said at least one semiconductor element includes at least one transistor, each having a source/drain region and a gate electrode, and
wherein the silicide region includes a first silicide portion in contact with the source/drain region, and a second silicide portion serving as at least a part of the gate electrode.
3. The semiconductor device according to claim 1 , wherein said at least one transistor includes an n-type transistor and a p-type transistor.