Fuse devices and methods of operating the same

1. A method of operating a fuse device including a fuse unit which includes a cathode, an anode, and a fuse link connecting the cathode and the anode, and a transistor including at least a first portion of the fuse unit, the method comprising:

applying a programming current to the fuse unit;

measuring a drain current of the transistor, wherein the fuse link is a gate of the transistor, the transistor further includes a source and a drain on a substrate at an each side of the fuse link, and at least one of the source and the drain has a fuse structure including,

two regions located apart from each other, and

a link region which has a width less than each of the two regions and the link region is located between the two regions; and

applying another programming current to at least one of the source and the drain having the fuse structure, prior to the measuring of the drain current.

2. The method of claim 1 , wherein measuring the drain current includes supplying a gate voltage to at least one of the cathode and anode, and supplying a voltage between the source and the drain.

3. The method of claim 1 , wherein the transistor comprises:

at least the first portion of the fuse unit as the source;

the drain located apart from the source; and

the gate on a substrate between at least the first portion of the fuse unit and the drain.

4. The method of claim 3 , wherein measuring the drain current includes supplying a gate voltage to the gate, and supplying a voltage between the cathode and the drain.

5. The method of claim 3 , wherein the fuse unit includes,

a doped region, and

a contact layer region, the contact layer region configured to change a drain current of the transistor.

6. The method of claim 1 , wherein the transistor comprises:

at least the first portion of the fuse unit as the drain;

the source located apart from the drain; and

the gate on a substrate between the source and at least the first portion of the fuse unit.

7. The method of claim 6 , wherein measuring the drain current includes supplying a gate voltage to the gate, and supplying a voltage between the cathode and the source.

8. The method of claim 6 , wherein the fuse unit includes,

a doped region, and

a contact layer region, the contact layer region configured to change a drain current of the transistor.

9. The method of claim 1 , wherein applying the programming current includes blowing the fuse link.

10. A method of operating a fuse device including a fuse unit which includes a cathode, an anode, and a fuse link connecting the cathode and the anode, and a transistor including at least a first portion of the fuse unit, the method comprising:

applying a programming current to the fuse unit; and

measuring a drain current of the transistor, wherein the fuse link includes,

a conductive layer, and

a highly-resistant region in a portion of the conductive layer, wherein the highly-resistant region is a region having an electrical resistance higher than that of a remaining portion of the conductive layer.

11. The method of claim 1 , wherein sidewalls of the fuse link are covered with an insulation layer.

12. The method of claim 11 , wherein the insulation layer covers sidewalls of the fuse link, anode and cathode.

13. The method of claim 1 , wherein the cathode includes,

a highly-resistant region, wherein the highly-resistant region is a region having an electrical resistance higher than a remaining portion of the cathode.

14. The method of claim 13 , wherein an electrical resistance of the fuse unit is based on the location of the highly-resistant region.

15. The method of claim 13 , wherein the highly-resistant region is configured to move.

16. The method of claim 10 , wherein applying the programming current includes,

moving the highly-resistant region into the cathode.