IP Library Granted Patent US 8,351,226
Granted Patent B2
US 8,351,226 · App. 11/905,699 · Granted Jan 8, 2013

Rectifier circuit, semiconductor device using the rectifier circuit, and driving method thereof

Assignee: Semiconductor Energy Laboratory Co., Ltd.
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Quick Facts
Patent No.
US 8,351,226
App. No.
11/905,699
Granted
Jan 8, 2013
Kind
B2
Abstract

An object of the present invention is to provide a rectifier circuit which can suppress loss of power due to parasitic capacitance or parasitic inductance of a semiconductor element. The rectifier circuit matches or mismatches impedance between a circuit of a previous stage and the rectifier circuit in accordance with the amplitude of an input AC voltage. When an AC voltage to be input has a smaller amplitude than a predetermined voltage, impedance is matched and the AC voltage is applied as is to the rectifier circuit. Conversely, when an AC voltage to be input has a larger amplitude than a predetermined voltage, impedance is mismatched, and the amplitude of the AC voltage is decreased by reflection and then the AC voltage is applied to the rectifier circuit.

Claims (143)

1. A rectifier circuit comprising:

a variable capacitor; and

a first diode and a second diode for rectifying an inputted AC voltage,

a first input terminal;

a second input terminal; and

an output terminal;

wherein a capacitance value of the variable capacitor is changed in accordance with an amplitude of the inputted AC voltage,

wherein the variable capacitor and the first diode are sequentially connected in series between the first input terminal and the output terminal; and

wherein the second diode and the first diode are sequentially connected in series between the second input terminal and the output terminal so that forward directions of the first diode and the second diode are the same.

2. A semiconductor device comprising:

the rectifier circuit according to claim 1 ; and

an antenna,

wherein the antenna is electrically connected to the first input terminal and the second input terminal.

3. The rectifier circuit according to claim 1 , wherein the variable capacitor is a p-channel MOS varactor.

4. The rectifier circuit according to claim 1 , further comprising:

a capacitor connected in parallel with the first diode and the second diode.

5. A semiconductor device comprising:

the rectifier circuit according to claim 1 ; and

an antenna,

wherein the inputted AC voltage is an AC electromotive force generated in the antenna.

6. A rectifier circuit comprising:

a variable capacitor;

a first diode and a second diode for rectifying an inputted AC voltage,

a capacitor;

a first input terminal;

a second input terminal; and

an output terminal;

wherein a capacitance value of the variable capacitor is changed in accordance with an amplitude of the inputted AC voltage,

wherein the capacitor and the first diode are sequentially connected in series between the first input terminal and the output terminal,

wherein the second diode and the first diode are sequentially connected in series between the second input terminal and the output terminal so that forward directions of the first diode and the second diode are the same, and

wherein the variable capacitor and the second diode are connected in parallel between the second input terminal and the first diode.

7. The rectifier circuit according to claim 6 , wherein the variable capacitor is an n-channel MOS varactor.

8. The rectifier circuit according to claim 6 , further comprising:

a resistor connected between the capacitor and the first diode.

9. A semiconductor device comprising:

the rectifier circuit according to claim 6 ; and

an antenna,

wherein the antenna is electrically connected to the first input terminal and the second input terminal.

10. A semiconductor device comprising:

the rectifier circuit according to claim 6 ; and

an antenna,

wherein the inputted AC voltage is an AC electromotive force generated in the antenna.

11. A rectifier circuit comprising:

a variable capacitor;

a first diode and a second diode for rectifying an inputted AC voltage,

a third diode;

an input terminal; and

an output terminal;

wherein a capacitance value of the variable capacitor is changed in accordance with an amplitude of the inputted AC voltage,

wherein the variable capacitor and the first diode are sequentially connected in series between the input terminal and the output terminal,

wherein the third diode, the second diode, and the first diode are sequentially connected in series between the input terminal and the output terminal so that forward directions of the first diode, the second diode and the third diode are the same, and

wherein the variable capacitor, the second diode, and the third diode are connected in parallel between the input terminal and the first diode.

12. The rectifier circuit according to claim 11 , wherein the variable capacitor is an n-channel MOS varactor.

13. The rectifier circuit according to claim 11 , further comprising:

a capacitor connected in parallel with the first diode and the second diode.

14. A semiconductor device comprising:

the rectifier circuit according to claim 11 ; and

an antenna,

wherein the antenna is electrically connected to the input terminal.

15. A semiconductor device comprising:

the rectifier circuit according to claim 11 ; and

an antenna,

wherein the inputted AC voltage is an AC electromotive force generated in the antenna.

16. A rectifier circuit comprising:

a variable capacitor;

a first diode and a second diode for rectifying an inputted AC voltage,

a third diode;

a first input terminal;

a second input terminal;

a first output terminal; and

a second output terminal;

wherein a capacitance value of the variable capacitor is changed in accordance with an amplitude of the inputted AC voltage,

wherein the variable capacitor and the first diode are sequentially connected in series between the first input terminal and the first output terminal,

wherein the second diode and the first diode are sequentially connected in series between the second input terminal and the first output terminal so that forward directions of the first diode and the second diode are the same, and

wherein the third diode, the variable capacitor, and the first diode are sequentially connected in series between the second output terminal and the first output terminal so that forward directions of the first diode and the third diode are the same.

17. The rectifier circuit according to claim 16 , wherein the variable capacitor is an n-channel MOS varactor.

18. The rectifier circuit according to claim 16 , further comprising:

a capacitor connected in parallel with the first diode and the second diode.

19. The rectifier circuit according to claim 16 , further comprising:

a capacitor connected between the second diode and the second output terminal.

20. A semiconductor device comprising:

the rectifier circuit according to claim 16 ; and

an antenna,

wherein the antenna is electrically connected to the first input terminal and the second input terminal.

21. A semiconductor device comprising:

the rectifier circuit according to claim 16 ; and

an antenna,

wherein the inputted AC voltage is an AC electromotive force generated in the antenna.

22. A rectifier circuit comprising:

a variable capacitor;

a first diode and a second diode for rectifying an inputted AC voltage,

a second variable capacitor;

a third diode;

a fourth diode;

a first input terminal;

a second input terminal; and

an output terminal;

wherein a capacitance value of the variable capacitor is changed in accordance with an amplitude of the inputted AC voltage,

wherein the variable capacitor, the second variable capacitor, and the first diode are sequentially connected in series between the first input terminal and the output terminal,

wherein the variable capacitor, the third diode, the second diode, and the first diode are sequentially connected in series between the first input terminal and the output terminal,

wherein the fourth diode, the third diode, the second diode, and the first diode are sequentially connected in series between the second input terminal and the output terminal so that forward directions of the first diode, the second diode, the third diode and the fourth diode are the same, and

wherein the second variable capacitor, the third diode, and the second diode are connected in parallel between the variable capacitor and the first diode.

23. The rectifier circuit according to claim 22 , wherein the variable capacitor and the second variable capacitor are p-channel MOS varactors.

24. The rectifier circuit according to claim 22 , further comprising:

a capacitor connected in parallel with the first diode and the second diode.

25. The rectifier circuit according to claim 22 , further comprising:

a capacitor connected in parallel with the third diode and the fourth diode.

26. A semiconductor device comprising:

the rectifier circuit according to claim 22 ; and

an antenna,

wherein the antenna is electrically connected to the first input terminal and the second input terminal.

27. A semiconductor device comprising:

the rectifier circuit according to claim 22 ; and

an antenna,

wherein the inputted AC voltage is an AC electromotive force generated in the antenna.

28. A rectifier circuit comprising:

a variable capacitor;

a first diode and a second diode for rectifying an inputted AC voltage,

a second variable capacitor;

a third diode;

a fourth diode;

a first input terminal;

a second input terminal;

a first output terminal; and

a second output terminal,

wherein a capacitance value of the variable capacitor is changed in accordance with an amplitude of the inputted AC voltage,

wherein the second variable capacitor and the first diode are sequentially connected in series between the first input terminal and the first output terminal,

wherein the fourth diode, the third diode, the second diode, and the first diode are sequentially connected in series between the second output terminal and the first output terminal so that forward directions of the first diode, the second diode, the third diode and the fourth diode are the same,

wherein the variable capacitor and the second variable capacitor which are sequentially connected in series are connected in parallel with the third diode and the second diode, and

wherein the second diode and the first diode are sequentially connected in series between the second input terminal and the first output terminal.

29. The rectifier circuit according to claim 28 , wherein the variable capacitor and the second variable capacitor are p-channel MOS varactors.

30. The rectifier circuit according to claim 28 , further comprising:

a capacitor connected in parallel with the first diode and the second diode.

31. The rectifier circuit according to claim 28 , further comprising:

a capacitor connected in parallel with the third diode and the fourth diode.

32. A semiconductor device comprising:

the rectifier circuit according to claim 28 ; and

an antenna,

wherein the antenna is electrically connected to the first input terminal and the second input terminal.

33. A semiconductor device comprising:

the rectifier circuit according to claim 28 ; and

an antenna,

wherein the inputted AC voltage is an AC electromotive force generated in the antenna.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 3, 2007
From: OSAKA, TAKESHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 019972/0691 →
Priority Claims (1)
JP 2006-274567 · Oct 6, 2006 · national
Continuity (1)
Related Publication 20080083969A1 · Apr 10, 2008