Acoustic wave duplexer
An acoustic wave duplexer includes a piezoelectric substrate, a first filter and a second filter whose center frequency is higher than that of the first filter, the first and second filters being provided on the piezoelectric substrate. The first filter is structured as a ladder type. A resonator positioned nearest to an antenna terminal out of series-arm resonators is designated as a first resonator. A pitch of a comb-shaped electrode structuring the first resonator is set such that a bulk wave emission frequency of the first resonator becomes higher than a passband of the second filter.
1. An acoustic wave duplexer, comprising:
a piezoelectric substrate; and
a first filter and a second filter provided on the piezoelectric substrate, wherein
a passband of the first filter is lower than a passband of the second filter,
the first filter is structured as a ladder type including series-arm resonators and parallel-arm resonators,
a resonator positioned nearest to an antenna terminal out of the series-arm resonators is designated as a first resonator,
a pitch of a comb-shaped electrode structuring the first resonator is set such that a bulk wave emission frequency of the first resonator becomes higher than the passband of the second filter.
2. The acoustic wave duplexer according to claim 1 , wherein
the series-arm resonators and the parallel-arm resonators except for the first resonator are designated as second resonators, and
a pitch of a comb-shaped electrode of at least one resonator structuring the second resonators is set such that a bulk wave emission frequency of the at least one resonator structuring the second resonators becomes lower than the passband of the second filter.
3. The acoustic wave duplexer according to claim 2 , wherein
a duty ratio of the comb-shaped electrode structuring each of the second resonators is 0.45 to 0.55.
4. The acoustic wave duplexer according to claim 2 , wherein
a capacitor is connected in parallel to the first resonator.
5. The acoustic wave duplexer according to claim 2 , wherein
the piezoelectric substrate is formed of a rotated Y-cut X-propagating lithium niobate.
6. The acoustic wave duplexer according to claim 5 , wherein
the piezoelectric substrate is formed of a −10 to +30° rotated Y-cut X-propagating lithium niobate.
7. The acoustic wave duplexer according to claim 1 , wherein
a capacitor is connected in parallel to the first resonator.
8. The acoustic wave duplexer according to claim 1 , wherein
the piezoelectric substrate is formed of a rotated Y-cut X-propagating lithium niobate.
9. The acoustic wave duplexer according to claim 8 , wherein
the piezoelectric substrate is formed of a −10 to +30° rotated Y-cut X-propagating lithium niobate.
10. The acoustic wave duplexer according to claim 1 , wherein
a duty ratio of the comb-shaped electrode structuring the first resonator is 0.6 to 0.7.