Air gap integration scheme

1. A method of forming a damascene structure, comprising:

depositing a porous low dielectric constant layer by a method comprising:

reacting an organosilicon compound and a porogen-providing precursor;

depositing a porogen-containing material; and

removing at least a portion of the porogen-containing material;

depositing an organic layer on the porous low dielectric constant layer by reacting the porogen-providing precursor;

forming a feature definition in the organic layer and the porous low dielectric constant layer;

filing the feature definition with a conductive material therein;

depositing a mask layer on the organic layer and the conductive material disposed in the feature definition;

forming apertures in the mask layer to expose the organic layer;

removing a portion or all of the organic layer through the apertures; and

forming an air gap adjacent the conductive material.

2. The method of forming a damascene structure according to claim 1 , wherein the organic layer comprises an amorphous carbon layer.

3. The method of forming a damascene structure according to claim 1 , wherein the porogen-providing precursor is alpha-terpinene.

4. The method of forming a damascene structure according to claim 1 , further comprising depositing a non-porous low dielectric constant material on the mask material after the removing the portion or all of the organic layer through the apertures.

5. The method of forming a damascene structure according to claim 1 , further comprising forming an etch stop between the porous low dielectric constant layer and the organic layer.

6. The method of forming a damascene structure according to claim 5 , wherein the etch stop is an oxidized upper surface of the porous low dielectric constant layer.

7. The method of forming a damascene structure according to claim 1 , wherein the removing a portion or all of the organic layer comprises removing the organic layer material by an ultra-violet curing process.

8. The method of forming a damascene structure according to claim 1 , wherein the mask layer comprises silicon carbide material or a doped silicon carbide material.

9. The method of forming a damascene structure according to claim 1 , wherein the porous low dielectric constant layer is a silicon oxycarbide layer.

10. The method of forming a damascene structure according to claim 1 , wherein the forming the feature definition comprises:

depositing a hard mask layer on the organic layer;

forming a first pattern in the hard mask layer;

transferring the pattern in the hard mask layer through the organic layer;

transferring the pattern in the hard mask layer through the porous low dielectric constant layer to form a via in the porous low dielectric constant layer;

forming a second pattern in the hard mask layer; and

transferring the second pattern through the second dielectric layer to form a trench in the organic layer.

11. The method of forming a damascene structure according to claim 1 , wherein depositing an organic layer comprises depositing an amorphous carbon layer by reacting the porogen-providing precursor in a chemical vapor deposition process.

12. The method of forming a damascene structure according to claim 10 , further comprising forming a barrier layer between the low dielectric constant material and an underlying conductive feature.

13. The method of forming a damascene structure according to claim 12 , further comprising removing the barrier layer over the conductive feature after the second pattern is transferred through the organic layer.

14. The method of forming a damascene structure according to claim 1 , wherein the porous low dielectric constant layer and the organic layer are deposited in-situ in the same processing chamber or processing tool.

15. A method of forming a damascene structure, comprising:

depositing a porous low dielectric constant layer by a method comprising:

reacting an organosilicon compound and alpha-terpinene;

depositing an alpha-terpinene containing material; and

removing at least a portion of alpha-terpinine in the alpha-terpinene containing material;

depositing an amorphous carbon layer on the porous low dielectric constant layer by reacting alpha-terpinene;

forming a feature definition in the amorphous carbon layer and the porous low dielectric constant layer;

filing the feature definition with a conductive material therein;

depositing a silicon carbide-based material on the amorphous carbon layer and the conductive material disposed in the feature definition;

forming apertures in the silicon carbide-based material to expose the amorphous carbon layer;

removing a portion or all of the amorphous carbon layer through the apertures; and

forming an air gap adjacent the conductive material.

16. The method of forming a damascene structure according to claim 15 , further comprising depositing a low dielectric constant material on the silicon carbide-based material after the removing a portion or all of the amorphous carbon layer.

17. The method of forming a damascene structure according to claim 15 , wherein the removing a portion or all of the amorphous carbon layer through the apertures comprises removing amorphous carbon material by an ultra-violet light curing process.

18. The method of forming a damascene structure according to claim 15 , wherein the porous low dielectric constant layer and the amorphous carbon layer are deposited in-situ in the same processing chamber or processing tool.

19. The method of forming a damascene structure according to claim 1 , further comprising forming an etch stop between the porous low dielectric constant layer and the organic layer.

20. A method of forming a damascene structure, comprising:

depositing a porous low dielectric constant layer by a method comprising:

reacting an organosilicon compound and alpha-terpinene;

depositing an alpha-terpinene containing material; and

removing at least a portion of alpha-terpinine in the alpha-terpinene containing material;

in situ depositing an amorphous carbon layer on the porous low dielectric constant layer by reacting alpha-terpinene;

forming a feature definition in the amorphous carbon layer and the porous low dielectric constant layer;

filing the feature definition with a conductive material therein;

depositing a silicon carbide-based material on the amorphous carbon layer and the conductive material disposed in the feature definition;

forming apertures in the silicon carbide-based material to expose the amorphous carbon layer;

removing a portion or all of the amorphous carbon layer through the apertures by a plasma etch process, a wet etch process, an annealing process, an electronic beam cure process, an ultra-violet light curing process, or a combination thereof;

forming an air gap adjacent the conductive material; and

depositing a non-porous low dielectric constant layer on the silicon-carbide layer.