Semiconductor integrated circuit
A semiconductor integrated circuit according to one aspect of the present invention may includes a plurality of driving circuits to drive a respective plurality of word lines with either a first voltage supplied from a first power supply or a second voltage supplied from a second power supply in accordance with a control signal, and a plurality of gate transistors in each of which a gate is connected to one of the plurality of word lines, and a connection state between a storage node and a bit line is changed based on the voltage provided to the word line connected to the gate. In the semiconductor integrated circuit, a gate oxide film of each of the plurality of gate transistors is thinner than a gate oxide film of each of transistors constituting the plurality of driving circuits.
1. A semiconductor integrated circuit, comprising:
a step-up voltage generator that generates a first voltage by boosting a first power supply voltage;
a plurality of driving circuits that drive a respective plurality of word lines and operate with the first voltage;
a plurality of memory cells, each of the memory cells including a gate transistor connected to an associated one of the word lines;
a control circuit that controls writing data to at least one of the memory cells and reading data from at least one of the memory cells and operates based on the first power supply voltage, wherein a gate oxide film of each of the gate transistors of the control circuit is thinner than a gate oxide film of each transistor constituting the driver circuits; and
a step-down voltage generator providing a second voltage by reducing the first power supply voltage, the second voltage being supplied to the control circuit.
2. The semiconductor integrated circuit according to claim 1 , wherein a gate oxide film of each transistor constituting the control circuit is thinner than the gate oxide film of each of the gate transistors.
3. The semiconductor integrated circuit according to claim 1 , wherein the gate oxide film of each of the gate transistors has substantially the same thickness as a gate oxide film of each transistor constituting the control circuit.
4. The semiconductor integrated circuit according to claim 1 , further comprising a CPU, wherein a gate oxide film of at least one transistor constituting the CPU is thinner than the gate oxide film of each of transistors constituting the driver circuits.
5. A semiconductor integrated circuit, comprising:
a step-up voltage generator that generates a first voltage by boosting a first power supply voltage;
a plurality of driving circuits that drive a respective plurality of word lines and operate with the first voltage;
a plurality of memory cells, each of the memory cells including a gate transistor connected to an associated one of the word lines; and
a control circuit that controls writing data to at least one of the memory cells and reading data from at least one of the memory cells and operates based on the first power supply voltage,
wherein a gate oxide film of each of the gate transistors of the control circuit is thinner than a gate oxide film of each transistor constituting the driver circuits, and
wherein the gate oxide film of each transistor constituting the control circuit is thinner than the gate oxide film of each of the gate transistors of the memory cells.
6. The semiconductor integrated circuit according to claim 5 , further comprising a CPU, wherein a gate oxide film of at least one transistor constituting the CPU is thinner than the gate oxide film of each of transistors constituting the driver circuits.
7. The semiconductor integrated circuit according to claim 6 , further comprising a step-down voltage generator providing a second voltage by reducing the first power supply voltage, the second voltage being supplied to the control circuit.