Semiconductor device, an electronic device and an electronic apparatus
A semiconductor device 1 includes: a base 2 mainly formed of a semiconductor material; a gate electrode 5 ; and a gate insulating film 3 provided between the base 2 and the gate electrode 5 . The gate insulating film 3 is formed of an insulative inorganic material containing silicon, oxygen and element X other than silicon and oxygen as a main material. The gate insulating film 3 is provided in contact with the base 2 , and contains hydrogen atoms. The gate insulating film 3 has a region where A and B satisfy the relation: B/A is 10 or less in the case where the total concentration of the element X in the region is defined as A and the total concentration of hydrogen in the region is defined as B. Further, the region is at least apart of the gate insulating film 3 in the thickness direction thereof.
1. A semiconductor device comprising:
a base made of a semiconductor material; and
a silicon oxide film disposed on the base,
the silicon oxide film including nitrogen and either hydrogen or deuterium,
the silicon oxide film having a first region in which B/A is in a range of 1.6 to 8.6,
a concentration of the nitrogen being defined as A, a concentration of the hydrogen or the deuterium being defined as B, and
the first region being located at a first distance from a first surface of the silicon oxide film toward a second surface of the silicone oxide film, the first surface being located at an interface of the silicon oxide film and the base, the first distance being Y/10, Y being an average thickness of the silicon oxide film.
2. The semiconductor device according to claim 1 , further comprising:
a gate electrode disposed on the silicon oxide film; and
a source region and a drain region disposed in the base.
3. Electronic equipment comprising:
the semiconductor device according to claim 1 .
4. Electronic equipment comprising:
the semiconductor device according to claim 2 .
5. The semiconductor device according to claim 1 ,
the silicon oxide film having a second region in which B/A is larger than that in the first region,
the second region being located at a second distance from the first surface toward the second surface, the second distance being longer than the first distance.
6. The semiconductor device according to claim 5 ,
B/A in the second region being in a range of 10.3 to 16.3, and
the second distance being Y/3.
7. Electronic equipment comprising:
the semiconductor device according to claim 6 .
8. Electronic equipment comprising:
the semiconductor device according to claim 5 .
9. A silicon oxide film of a semiconductor device comprising:
silicon oxide;
nitrogen; and
hydrogen or deuterium,
the silicon oxide film having a first region in which B/A is in a range of 1.6 to 8.6,
a concentration of the nitrogen being defined as A, a concentration of the hydrogen or the deuterium being defined as B,
the first region being located at a first distance from a first surface of the silicon oxide film toward a second surface of the silicon oxide film, the first surface being located at an interface of the silicon oxide film and a base made of a semiconductor material, the first distance being Y/10, Y being an average thickness of the silicon oxide film.
10. The silicon oxide film according to claim 9 ,
the silicon oxide film having a second region in which B/A is larger than that in the first region,
the second region being located at a second distance from the first surface toward the second surface, the second distance being longer than the first distance.
11. The silicon oxide film according to claim 10 ,
B/A in the second region being in a range of 10.3 to 16.3, and
the second distance being Y/3.