Solid-state imaging device, manufacturing method thereof, and electronic apparatus
A solid-state imaging device includes: a plurality of photoelectric conversion units disposed on an imaging surface of a substrate; and a plurality of inner-layer lenses that are disposed in correspondence with each of the plurality of photoelectric conversion units on the upper side of the photoelectric conversion units and are formed in shapes protruding in directions toward the photoelectric conversion units, wherein each of the plurality of inner-layer lenses is formed to have different lens shapes in the center and in the periphery of the imaging surface.
1. A solid-state imaging device comprising:
a plurality of photoelectric conversion units disposed on an imaging surface of a substrate; and
a plurality of inner-layer lenses that are disposed in correspondence with each of the plurality of photoelectric conversion units on the upper side of the photoelectric conversion units and are formed in shapes protruding in directions toward the photoelectric conversion units,
wherein each of the plurality of inner-layer lenses is formed to have different lens shapes in the center and in the periphery of the imaging surface,
wherein the center of each of the plurality of inner-layer lenses is disposed so as to be shifted further to the center side of the imaging surface with respect to the center of the photoelectric conversion unit as the position of the each of the plurality of the inner-layer lenses disposed on the imaging surface is more distant from the center of the imaging surface,
wherein the inner-layer lens is formed by stacking a plurality of lens material layers, and
wherein each of the plurality of lens material layers is formed such that a lower face of a first lens material layer that is the closest to the photoelectric conversion unit of the plurality of lens material layers has an area less than that of an upper face of a second lens material layer that is the most distant from the photoelectric conversion unit of the plurality of lens material layers.
2. The solid-state imaging device according to claim 1 , wherein a cross-section of each of the plurality of lens material layers that is perpendicular to the imaging surface includes a tapered portion of which a width that is defined in a direction along the imaging surface is narrowed further in a direction toward the photoelectric conversion unit.
3. The solid-state imaging device according to claim 2 , wherein each of the plurality of lens material layers is formed to have a refractive index decreasing in the direction toward the photoelectric conversion unit.
4. The solid-state imaging device according to claim 2 , wherein each of the plurality of lens material layers is formed to have a refractive index increasing in the direction toward the photoelectric conversion unit.
5. The solid-state imaging device according to claim 1 , wherein each of the plurality of lens material layers is formed to have a refractive index changing in the direction toward the photoelectric conversion unit.
6. The solid-state imaging device according to claim 1 , further comprising a color filter that is disposed on the upper side of the photoelectric conversion unit,
wherein the inner-layer lens is disposed so as to be interposed between the color filter and the photoelectric conversion unit.
7. The solid-state imaging device according to claim 1 , further comprising optical waveguides disposed in correspondence with each of the plurality of photoelectric conversion units on the upper side of the plurality of photoelectric conversion units,
wherein the inner-layer lens is disposed so as to be interposed between the optical waveguide and the photoelectric conversion unit.
8. The solid-state imaging device according to claim 1 , further comprising on-chip lenses disposed to be in correspondence with each of the plurality of inner-layer lenses on the upper side of the plurality of inner-layer lenses.
9. An electronic apparatus comprising:
a plurality of photoelectric conversion units disposed on an imaging surface of a substrate; and
a plurality of inner-layer lenses that are disposed in correspondence with each of the plurality of photoelectric conversion units on the upper side of the photoelectric conversion units and are formed in shapes protruding in directions toward the photoelectric conversion units,
wherein each of the plurality of inner-layer lenses is formed to have different lens shapes in the center and in the periphery of the imaging surface,
wherein the center of each of the plurality of inner-layer lenses is disposed so as to be shifted further to the center side of the imaging surface with respect to the center of the photoelectric conversion unit as the position of the each of the plurality of the inner-layer lenses disposed on the imaging surface is more distant from the center of the imaging surface,
wherein the inner-layer lens is formed by stacking a plurality of lens material layers, and
wherein each of the plurality of lens material layers is formed such that a lower face of a first lens material layer that is the closest to the photoelectric conversion unit of the plurality of lens material layers has an area less than that of an upper face of a second lens material layer that is the most distant from the photoelectric conversion unit of the plurality of lens material layers.
10. A method of manufacturing a solid-state imaging device, the method comprising the steps of:
forming a plurality of inner-layer lenses in shapes protruding in directions toward a plurality of photoelectric conversion units on the upper side of the plurality of photoelectric conversion units so as to be in correspondence with each of the plurality of photoelectric conversion units disposed on an imaging surface of a substrate,
wherein, in the forming of the plurality of inner-layer lenses, each of the plurality of inner-layer lenses is formed to have different lens shapes in the center and in the periphery of the imaging surface,
wherein the center of each of the plurality of inner-layer lenses is disposed so as to be shifted further to the center side of the imaging surface with respect to the center of the photoelectric conversion unit as the position of the each of the plurality of the inner-layer lenses disposed on the imaging surface is more distant from the center of the imaging surface,
wherein the inner-layer lens is formed by stacking a plurality of lens material layers, and
wherein each of the plurality of lens material layers is formed such that a lower face of a first lens material layer that is the closest to the photoelectric conversion unit of the plurality of lens material layers has an area less than that of an upper face of a second lens material layer that is the most distant from the photoelectric conversion unit of the plurality of lens material layers.