IP Library › Granted Patent US 8,395,938

Granted Patent B2

US 8,395,938 · App. 12/987,279 · Granted Mar 12, 2013

Non-volatile semiconductor memory device equipped with an oxide semiconductor writing transistor having a small off-state current

Inventors: Shunpei Yamazaki (Tokyo, JP); Jun Koyama (Kanagawa, JP); Kiyoshi Kato (Kanagawa, JP)

Assignee: Semiconductor Energy Laboratory Co., Ltd.

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Quick Facts

Patent No.: US 8,395,938
App. No.: 12/987,279
Granted: Mar 12, 2013
Kind: B2

External Links

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Abstract

An object is to provide a semiconductor device in which stored data can be retained even when power is not supplied, and there is no limitation on the number of write cycles. The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, a memory cell connected between the source line and the bit line, a first driver circuit electrically connected to the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line and the source line. The first transistor is formed using a semiconductor material other than an oxide semiconductor. The second transistor is formed using an oxide semiconductor material.

Claims (123)

1. A semiconductor device comprising:

a source line;

a bit line extending across the source line;

a first signal line;

a second signal line;

a word line;

a memory cell;

a first driver circuit electrically connected to the bit line; and

a second driver circuit electrically connected to the source line,

wherein the memory cell includes a first transistor having a first gate electrode, a first source electrode, and a first drain electrode; a second transistor having a second gate electrode, a second source electrode, and a second drain electrode; and a capacitor,

wherein the second transistor includes an oxide semiconductor,

wherein the first gate electrode, one of the second source electrode and the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other,

wherein the source line is electrically connected to the first source electrode,

wherein the bit line is electrically connected to the first drain electrode,

wherein the first signal line is electrically connected to the other of the second source electrode and the second drain electrode,

wherein the second signal line is electrically connected to the second gate electrode and,

wherein the word line is electrically connected to the other of the electrodes of the capacitor.

2. The semiconductor device according to claim 1 , wherein the first transistor includes a semiconductor other than an oxide semiconductor material.

3. The semiconductor device according to claim 1 , further comprising a reading circuit electrically connected to the bit line.

4. The semiconductor device according to claim 1 ,

wherein the first transistor includes:

a first channel formation region including the semiconductor other than the oxide semiconductor;

an impurity region;

a first gate insulating layer over the first channel formation region;

the first gate electrode over the first gate insulating layer; and

the first source electrode and the first drain electrode electrically connected to the impurity region.

5. The semiconductor device according to claim 1 ,

wherein the second transistor includes:

the second source electrode and the second drain electrode above the first transistor;

a second channel formation region including the oxide semiconductor and electrically connected to the second source electrode and the second drain electrode;

a second gate insulating layer over the second channel formation region; and

the second gate electrode over the second gate insulating layer.

6. The semiconductor device according to claim 5 ,

wherein the capacitor includes:

one of the second source electrode and the second drain electrode;

the second gate insulating layer; and

a capacitor electrode over the second gate insulating layer.

7. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises at least one of indium, gallium, tin, and zinc.

8. An electronic device comprising the semiconductor device according to claim 1 , wherein the electronic device is one selected from the group consisting of a computer, a mobile phone, a portable information terminal, a digital camera, a digital video camera, an electronic paper, and a television device.

9. A semiconductor device comprising:

a source line;

a bit line extending across the source line;

a first signal line;

a second signal line;

a word line;

a memory cell;

a first driver circuit electrically connected to the bit line;

a second driver circuit electrically connected to the source line and the word line;

a third driver circuit electrically connected to the first signal line; and

a fourth driver circuit electrically connected to the second signal line,

wherein the second transistor includes an oxide semiconductor,

wherein the first gate electrode, one of the second source electrode and the second drain electrode, and one of electrodes of the capacitor are electrically connected to each other,

wherein the source line is electrically connected to the first source electrode,

wherein the bit line is electrically connected to the first drain electrode,

wherein the first signal line is electrically connected to the other of the second source electrode and the second drain electrode,

wherein the second signal line is electrically connected to the second gate electrode, and

wherein the word line is electrically connected to the other of the electrodes of the capacitor.

10. The semiconductor device according to claim 9 , wherein the first transistor includes a semiconductor other than an oxide semiconductor material.

11. The semiconductor device according to claim 9 , further comprising a reading circuit electrically connected to the bit line.

12. The semiconductor device according to claim 9 ,

wherein the first transistor includes:

a first channel formation region including the semiconductor other than the oxide semiconductor;

an impurity region;

a first gate insulating layer over the first channel formation region;

the first gate electrode over the first gate insulating layer; and

the first source electrode and the first drain electrode electrically connected to the impurity region.

13. The semiconductor device according to claim 9 ,

wherein the second transistor includes:

the second source electrode and the second drain electrode above the first transistor;

a second channel formation region including the oxide semiconductor and electrically connected to the second source electrode and the second drain electrode;

a second gate insulating layer over the second channel formation region; and

the second gate electrode over the second gate insulating layer.

14. The semiconductor device according to claim 13 ,

wherein the capacitor includes:

one of the second source electrode and the second drain electrode;

the second gate insulating layer; and

a capacitor electrode over the second gate insulating layer.

15. The semiconductor device according to claim 9 , wherein the oxide semiconductor comprises at least one of indium, gallium, tin, and zinc.

16. An electronic device comprising the semiconductor device according to claim 9 , wherein the electronic device is one selected from the group consisting of a computer, a mobile phone, a portable information terminal, a digital camera, a digital video camera, an electronic paper,

and a television device.

17. A semiconductor device comprising:

a source line;

a bit line extending across the source line;

a first signal line;

a second signal line;

a word line;

a memory cell;

a first driver circuit electrically connected to the bit line and the word line;

a second driver circuit electrically connected to the source line;