Semiconductor memory device with a skew signal generator for adjusting a delay interval of internal circuitry

1. A semiconductor memory device comprising:

a skew signal generator for generating skew signals including skew information of a wafer based on fuse signals generated from a plurality of fuses;

a delay circuit coupled to the skew signal generator, for adjusting a delay interval in response to the skew signals;

a fuse signal generating unit including the fuses to generate the fuse signals;

an encoder for generating the skew signals including the skew information by encoding the fuse signals; and

a reference voltage generating unit coupled to the fuse signal generating unit, for receiving an external voltage to generate a reference voltage.

2. The semiconductor memory device of claim 1 , wherein the fuse signal generating unit comprises:

a first fuse connected between a supply voltage terminal and a first node; and

a second fuse connected between the supply voltage terminal and a second node,

wherein a first fuse signal, which is enabled according to whether the first fuse is cut, is output to the first node, and a second fuse signal, which is enabled according to whether the second fuse is cut, is output to the second node.

3. The semiconductor memory device of claim 2 , wherein the skew information is obtained through a wafer test, and the first and second fuses are cut according to the skew information obtained through the wafer test.

4. The semiconductor memory device of claim 1 , wherein the encoder receives the fuse signals to generate first to third skew signals enabled according to a number of signals enabled among the fuse signals.

5. The semiconductor memory device of claim 1 , wherein the delay circuit comprises:

a first delay unit for delaying an input signal by a first delay interval;

a second delay unit for delaying the input signal by a second delay interval;

a third delay unit for delaying the input signal by a third delay interval;

a first transfer unit for transferring an output signal of the first delay unit in response to the first skew signal;

a second transfer unit for transferring an output signal of the second delay unit in response to the second skew signal; and

a third transfer unit for transferring an output signal of the third delay unit in response to the third skew signal.

6. The semiconductor memory device of claim 5 , wherein the first to third delay units comprise respective inverter chains.

7. The semiconductor memory device of claim 5 , wherein the first delay interval is shorter than the second delay interval and the second delay interval is shorter than the third delay interval.