IP Library Granted Patent US 8,398,876
Granted Patent B2
US 8,398,876 · App. 12/576,061 · Granted Mar 19, 2013

Method for chemical modification of a graphene edge, graphene with a chemically modified edge and devices including the graphene

Inventors: Won Mook Choi (Hwaseong-si, KR); Byung Hee Hong (Seoul, KR); Jaeyoung Choi (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
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Quick Facts
Patent No.
US 8,398,876
App. No.
12/576,061
Granted
Mar 19, 2013
Kind
B2
Abstract

A method for chemical modification of graphene includes dry etching graphene to provide an etched graphene; and introducing a functional group at an edge of the etched graphene. Also disclosed is graphene, including an etched edge portion, the etched portion including a functional group.

Claims (14)

1. A method for chemical modification of a graphene edge, the method comprising:

dry etching a graphene sheet to provide graphene having an etched graphene edge; and

introducing a functional group at the etched graphene edge to chemically modify the graphene edge by contacting the etched graphene edge with a composition that provides hydroxide ions.

2. The method according to claim 1 , wherein the composition comprises water, an alcohol or a combination thereof.

3. The method according to claim 1 , further comprising contacting the etched graphene with steam.

4. The method according to claim 1 , wherein the dry etching is a physical dry etching method or a chemical dry etching method.

5. The method according to claim 4 , wherein the dry etching is a method selected from the group consisting of oxygen plasma etching, oxygen reactive ion etching, ultraviolet ozone etching and a combination thereof.

6. The method according to claim 1 , further comprising:

covering the graphene with an etching mask;

dry etching the graphene covered with the etching mask;

removing the etching mask; and

contacting the graphene where the etching mask is removed with water, an alcohol or a combination thereof.

7. A method for chemical modification of a graphene edge, the method comprising:

dry etching a graphene sheet to provide graphene having an etched graphene edge; and introducing a functional group at the etched graphene edge to chemically modify the graphene, wherein the functional group is at least one selected from the group consisting of —C═O, —COOH, —C—OH, —CH═O, —COO − , —COOR wherein R represents C 1 -C 6 alkyl and a combination thereof.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 9, 2009
From: CHOI, WON MOOK; HONG, BYUNG HEE; CHOI, JAEYOUNG
To: SAMSUNG ELECTRONICS CO., LTD.
Reel/Frame 023352/0585 →
Priority Claims (1)
KR 10-2009-0003302 · Jan 15, 2009 · national
Continuity (1)
Related Publication 20100178464A1 · Jul 15, 2010