Semiconductor device and manufacturing method thereof
Provided is a manufacturing method for an offset MOS transistor capable of operating safely even under a voltage of 50 V or higher. In the offset MOS transistor which includes a LOCOS oxide film, the LOCOS oxide film formed in a periphery of a drain diffusion layer, in which a high withstanding voltage is required, is etched, and the drain diffusion layer is formed so as to spread into a surface region of a semiconductor substrate located below a region in which the LOCOS oxide film is thinned. As a result, end portions of the drain diffusion layer are covered by an offset diffusion layer, whereby electric field concentration occurring in a region of a lower portion of the drain diffusion layer can be relaxed.
1. A manufacturing method for a semiconductor device including a field effect transistor having a LOCOS offset, the manufacturing method comprising:
forming a sacrificial oxide film on a semiconductor substrate having a first conductivity type;
forming a nitride film on the sacrificial oxide film,
etching only a target region of the nitride film;
forming an offset diffusion layer having a second conductivity type through ion implantation;
forming a LOCOS oxide film on the region in which the nitride film is etched;
removing the nitride film and the sacrificial oxide film;
forming a gate oxide film on a surface of the semiconductor substrate, forming a polycrystalline silicon film on the gate oxide film, and etching only a target region of the polycrystalline silicon film;
forming a heavily-doped diffusion layer having a second conductivity type through ion implantation, the heavily-doped diffusion layer serving as a drain diffusion layer;
etching a part of the LOCOS oxide film adjacent to the drain diffusion layer so as to reduce a film thickness of the LOCOS oxide film toward the drain diffusion layer, wherein an end of the LOCOS oxide film on a drain diffusion layer side is formed in a round shape; and
wherein an end of the drain diffusion layer adjacent to the LOCOS oxide film is formed to extend into the offset diffusion layer to cover a region where the part of the LOCOS oxide film is etched, and an impurity concentration of the end of the drain diffusion layer adjacent to the LOCOS oxide film is lower than an impurity concentration of a center portion of the drain diffusion layer.
2. A manufacturing method for a semiconductor device according to claim 1 , wherein the etching the gate oxide film and the LOCOS oxide film includes performing isotropic etching.
3. A semiconductor device, comprising:
a semiconductor substrate having a first conductivity type;
a gate oxide film disposed on a part of a surface of the semiconductor substrate;
a source diffusion layer having a second conductivity type disposed in a vicinity of the surface of the semiconductor substrate adjacent to the gate oxide film;
a LOCOS oxide film positioned apart from the source diffusion layer, wherein the gate oxide film is arranged between the source diffusion layer and the LOCOS oxide film;
a gate electrode disposed on the gate oxide film extending from an end portion of the source diffusion layer to the LOCOS oxide film;
a offset diffusion layer having a second conductivity type disposed in a vicinity of the surface of the semiconductor substrate and located underneath the LOCOS oxide film; and
a drain diffusion layer having a second conductivity type disposed in a vicinity of the surface of the semiconductor substrate and arranged adjacent to the LOCOS oxide film on a side opposite to the gate oxide film, the drain diffusion layer positioned between the offset diffusion layer and another offset diffusion layer arranged underneath a neighboring LOCOS oxide film;
wherein:
the LOCOS oxide film has a thickness which is continuously reduced toward the drain diffusion layer;
wherein an end of the LOCOS oxide film on a drain diffusion layer side is contoured into a round shape; and
wherein an end of the drain diffusion layer adjacent to the LOCOS oxide film is formed to extend into the offset diffusion layer to cover a region having an etched part of the LOCOS oxide film, and an impurity concentration of the end of the drain diffusion layer adjacent to the LOCOS oxide film is lower than an impurity concentration of a center portion of the drain diffusion layer.