Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers
View Patent ↗A nano-imprint lithography stack includes a nano-imprint lithography substrate, a non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, and a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the non-silicon-containing layer. The non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate. The silicon-containing layer includes a silsesquioxane with a general formula (R′ (4-2z) SiO z ) x (HOSiO 1.5 ) y , wherein R′ is a hydrocarbon group or two or more different hydrocarbon groups other than methyl, 1<z<2, and x and y are integers. The imprint lithography stack may further include a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the non-silicon-containing layers.
1. A nano-imprint lithography stack comprising:
a nano-imprint lithography substrate;
a first non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, wherein the first non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate;
a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the first non-silicon-containing layer, the silicon-containing layer comprising:
a silsesquioxane with a general formula
(R′ (4-2z) SiO z ) x (HOSiO 1.5 ) y ,
wherein:
R′ is a hydrocarbon group or two or more different hydrocarbon groups other than methyl,
1<z<2, and
x and y are integers; and
a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the first and second non-silicon-containing layers.
2. The imprint lithography stack of claim 1 , wherein a silicon content of the silicon-containing layer is at least about 10 wt %.
3. The imprint lithography stack of claim 1 , wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through covalent bonds between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.
4. The imprint lithography stack of claim 1 , wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through polar interactions between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.
5. The imprint lithography stack of claim 1 , wherein the polar interactions comprise hydrogen-bonding interactions.
6. The imprint lithography stack of claim 1 , wherein the silicon-containing layer is less than about 100 nm thick.
7. The imprint lithography stack of claim 1 , wherein R′ comprises a phenyl group.
8. A nano-imprint lithography stack comprising:
a nano-imprint lithography substrate;
a first non-silicon-containing layer solidified from a first polymerizable, non-silicon-containing composition, wherein the first non-silicon-containing layer is adhered directly or through one or more intervening layers to the nano-imprint lithography substrate;
a silicon-containing layer solidified from a polymerizable silicon-containing composition adhered to a surface of the first non-silicon-containing layer, the silicon-containing layer comprising:
a silsesquioxane with a general formula
(R′ (4-2z) SiO z ) x (HOSiO 1.5 ) y ,
wherein:
R′ is a hydrocarbon group or two or more different hydrocarbon groups other than methyl,
1<z<2, and
x and y are integers,
wherein the silicon-containing layer is less than about 100 nm thick.
9. The imprint lithography stack of claim 8 , further comprising a second non-silicon-containing layer solidified from a second polymerizable, non-silicon-containing composition adhered to a surface of the silicon-containing layer such that the silicon-containing layer is sandwiched between the first and second non-silicon-containing layers.
10. The imprint lithography stack of claim 8 , wherein a silicon content of the silicon-containing layer is at least about 10 wt %.
11. The imprint lithography stack of claim 8 , wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through covalent bonds between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.
12. The imprint lithography stack of claim 8 , wherein the silicon-containing layer is adhered to the first non-silicon-containing layer through polar interactions between carbon-containing components in the first non-silicon-containing layer and carbon-containing components in the silicon-containing composition.
13. The imprint lithography stack of claim 8 , wherein the polar interactions comprise hydrogen-bonding interactions.
14. The imprint lithography stack of claim 8 , wherein R′ comprises a phenyl group.