Light emitting element with improved light extraction efficiency, light emitting device comprising the same, and fabricating method of the light emitting element and the light emitting device

1. A method of fabricating a light emitting element, the method comprising:

forming a groove in a substrate to define a device formation region;

forming a light emitting structure including a first conductive layer of a first conductivity type, a light emitting layer, and a second conductive layer of a second conductivity type which are sequentially stacked on the device formation region, wherein the width of the first conductive layer is larger than the width of the second conductive layer and the light emitting layer, and the first conductive layer protrudes on sides more than the second conductive layer or the light emitting layer;

forming a first electrode which is electrically connected with the second conductive layer and connected from a top of the light emitting structure, through a sidewall of the light emitting structure, and to a sidewall of the groove;

removing a part of the first electrode to expose a part of a region where the first conductive layer protrudes; and

forming a second electrode which is electrically connected with the first conductive layer on the exposed first conductive layer.

2. The method of claim 1 , wherein the first electrode is separated apart from the second electrode and surrounds the second electrode.

3. The method of claim 1 , wherein the light emitting structure is formed such that the light emitting structure has a bottom width larger than a top width to have a side slope.

4. The method of claim 1 , wherein forming the light emitting structure comprises:

forming a first dielectric layer on the groove and the device formation region, etching a part of the first dielectric layer to expose a part of the device formation region, sequentially forming the first conductive layer, the light emitting layer, and the second conductive layer on the exposed device isolation region, and etching a part of the second conductive layer and a part of the light emitting layer to form a light emitting structure in which the width of the first conductive layer is larger than the width of the second conductive layer and the width of the light emitting layer.

5. The method of claim 4 , wherein forming the first electrode comprises:

conformally forming a second dielectric layer on the first dielectric layer and the light emitting structure, removing a part of the second dielectric layer to expose a part of the second conductive layer, forming an ohmic layer on the exposed second conductive layer, and forming the first electrode which is electrically connected with the ohmic layer.

6. The method of claim 1 , wherein forming the groove in the substrate is performed with at least one selected from the group consisting of dicing equipment, a diamond tip, laser, and ICP RIE (Inductively Coupled Plasma Reactive Ion Etching).

7. The method of claim 1 , further comprising forming a dome pattern on the substrate; wherein forming the light emitting structure includes conformally forming the light emitting structure along the dome pattern.

8. The method of claim 7 , wherein the dome pattern is a convex dome pattern, and forming the dome pattern on the substrate includes forming a mask pattern in a convex dome shape on the substrate and etching the substrate with the mask pattern in the convex dome shape.

9. The method of claim 7 , wherein the dome pattern is a concave dome pattern, and forming the dome pattern on the substrate includes forming a mask layer on the substrate, forming the concave dome pattern in the mask layer using a tool where a convex dome pattern is formed, and etching the substrate using the mask layer where the concave dome pattern is formed.

10. The method of claim 1 , further comprising separating into a chip unit using a grinding process after the second electrode formed.

11. The method of claim 10 , wherein the light emitting structure is formed on one side of the substrate and separating into the chip unit includes grinding from the other side of the substrate to the groove to separate into the chip unit.