IP Library Granted Patent US 8,415,408
Granted Patent B2
US 8,415,408 · App. 12/731,424 · Granted Apr 9, 2013

Germs resisting and self cleaning infiltration thin film and manufacturing method thereof

Inventors: Cheng-Chien Yang (Longtan Township, Taoyuan County, TW); Kuo-Hui Wu (Taoyuan, TW); Wang-Tsai Gu (Longtan Township, Taoyuan County, TW); Yu-Zen Hsieh (Chiayi, TW); Mang-Zhi Wu (Zhuangwei Township, Yilan County, TW)
Assignee: Chung-Shan Institute of Science and Technology, Armaments Bureau of National Defense
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Quick Facts
Patent No.
US 8,415,408
App. No.
12/731,424
Granted
Apr 9, 2013
Kind
B2
Abstract

The invention provides a germs resisting and self-cleaning infiltration thin film and manufacturing method thereof. At first, a Polyethyleneimine (PEI) and a Polyvinyl Alcohol (PVA) are used to make a polymer thin film. Then, a germ resistant and an inorganic metal oxide are added into the polymer thin film to form the selective infiltration thin film capable of resisting germs and self-cleaning.

Claims (21)

1. A method of manufacturing a selective infiltration thin film of a specific, pre-determined diameter D (in mm) of the bacteriostatic circle at a constant temperature 37° C., comprising the steps of

(a) mixing Polyethyleneimine (PEI) and Polyvinyl Alcohol (PVA) with a casting method for a polymer thin film;

(b) setting a value of r ranging between 0 and 1, and rεR, or real numbers;

(c) Obtaining a value of M in Pearson's product-moment formula, M=r·D, and adding an amount M of an inorganic metal oxide, namely, Polyoxometalate (POM) into the polymer thin film;

(d) forming the selective infiltration thin film,

wherein the desired diameter D of the bacteriostatic circle of the thin film corresponds to a diameter D′ obtained according to the following steps:

i) sterilizing a wafer paper spindles (6 mm) at 120° C.,

ii) immersing the wafer paper spindles into the thin film,

iii) disposing the wafer paper spindles in a vaccinated strain (10 5 cfu/ml) Mueller Hinton ager (MHA) disk, and

after 24 hours of training of the wafer paper spindles in a constant temperature incubator at 37° C., measuring the diameter D′ of the bacteriostatic circle.

2. A method of manufacturing a selective infiltration thin film of a specific, pre-determined diameter D (in mm) of the bacteriostatic circle at a constant temperature 37° C., comprising the steps of

(a) mixing Polyethyleneimine (PEI) and Polyvinyl Alcohol (PVA) with a casting method for a polymer thin film;

(b) setting a value of r ranging between 0 and 1, and rεR, or real numbers;

(c) Obtaining a value of M in Pearson's product-moment formula, M=r·D, and

adding an amount M of a germ resistance containing silver ion (Ag+) into the polymer thin film;

(d) forming the selective infiltration thin film,

wherein the desired diameter D of the bacteriostatic circle of the thin film corresponds to a diameter D′ obtained according to the following steps:

iv) sterilizing a wafer paper spindles (6 mm) at 120° C.,

v) immersing the wafer paper spindles into the thin film,

vi) disposing the wafer paper spindles in a vaccinated strain (10 5 cfu/ml) Mueller Hinton ager (MHA) disk, and

after 24 hours of training of the wafer paper spindles in a constant temperature incubator at 37° C., measuring the diameter D′ of the bacteriostatic circle.

Assignments (2)
CHANGE OF NAME Recorded Apr 17, 2015
From: CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS, BUREAU, MINISTRY OF NATIONAL DEFENSE
To: NATIONAL CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY
Reel/Frame 035453/0379 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Sep 9, 2010
From: YANG, CHENG-CHIEN; WU, KUO-HUI; GU, WANG-TSAI; HSIEH, YU-ZEN; WU, MANG-ZHI
To: CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY, ARMAMENTS BUREAU, MINISTRY OF NATIONAL DEFENSE
Reel/Frame 024965/0822 →
Continuity (1)
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